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Press Releases
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OMMIC launches 10 new MMIC devices for Telecommunications and Radar Applications- June. 2011
IMS 2011, June 2011, Baltimore, U.S.A.
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Baltimore, 8th June 2011
IEEE IMS2011, Baltimore, U.S.A., 8th June 2011 - OMMIC announces the release of 10 new MMICs for Telecommunication and Radar applications including Ultra Low Noise Amplifiers, Power amplifiers and Control Functions from 5 to 160 GHz.
OMMIC has significantly reduced the Noise Figure for commercially available Low Noise covering the 5 – 7, 18 – 26, 25 – 43, 13 – 15 and 110 – 160 GHz bands with 0.5, 1.1, 1.5, 1.5 and 4.5 dB Noise amplifier MMICs with the new CGY2120XUH, CGY2121XUH, CGY2122XUH, CGY2125AUH and CGY2191UH Low Noise Amplifiers Figures respectively. The CGY2178HV is a new Plastic Packaged version of the Space Qualified CGY2178UH MMIC providing over 30 dB of gain and 1 dB noise figure over the 5 – 6 GHz frequency band.
In the area of Power amplifiers OMMIC announces the release of a 5 W Output Power MMIC, the CGY2138UH, operating in the 27.5 GHz to 31 GHz band with 19 dB of gain under 5 V and 5.6 A. This MMIC is ideal for VSAT and point to point / point to multipoint Applications.
OMMIC has also released new products in its successful Control Function Family of devices. The CGY2179UH and CGY2179HV are bare die and QFN Plastic Packaged versions of a 4 bit Phase Shifter and Low Noise Amplifier combination operating in the band 10.7 to 12.75 GHz providing 12 dB of gain and a 1.9 dB Noise Figure. An on-chip Serial to Parallel converter simplifies the interfacing to the MMIC and in particular allows easy daisy chaining with a minimum number of interface lines and bonding pads. The CGY2174UH is a 6-bit Phase Shifter designed for the 13 – 16 GHz frequency range and is highly suited to both Space based and Terrestrial Ku-band telecommunication antennas.
Commenting on the latest Product Releases, Derek Smith OMMIC’s Marketing and Sales Director comments that “these new products demonstrate OMMIC’s commitment to bring to market products that have outstanding and unique specifications based on OMMIC’s set of Leading Edge but Commercial Technologies – from the 70 nm MHEMT to the Enhancement/Depletion Mode PHEMT Processes.”
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OMMIC Design Kits Offer Complete Front-to-Back Flow Support for Agilent Technologies Recently Released Advanced Design System 2011 Software- June. 2011
IMS 2011, June 2011, Baltimore, U.S.A.
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Baltimore, 8th June 2011
IEEE IMS2011, Baltimore, U.S.A., 8th June 2011 - OMMIC today announced the availability of their process design kits (PDKs) for use with Agilent Technologies Inc. recently released Advanced Design System (ADS) 2011 EDA software. The kits work seamlessly with ADS 2011, ADS 2009 Update 1 and prior ADS releases, enabling our mutual customers to take full advantage of the significant breakthroughs in ADS 2011.
"Our customers expect an integrated tool flow to meet their RF and Microwave design challenges and to achieve first-time-right designs,” said Marc Rocchi, president of OMMIC. "Leveraging the latest ADS 2011 capabilities in our PDKs, we are now able to provide our mutual customers a complete front-to-back flow within a single environment including DRC sign-off. This is an integral part of OMMIC’s Fab+ Foundry Service."
“We are very happy with the expanded PDK support from OMMIC, as we see a strong and growing demand for ADS 2011 support in our customer base,” said Juergen Hartung, foundry program manager of Agilent’s EEsof EDA organization. “With these kits, our customers can now enjoy the industry’s most comprehensive multi-technology design platform using Momentum, the industry-leading 3D planar EM simulator, our integrated full 3D FEM engine, industry proven design-for-manufacturing capabilities inside ADS, and an upgraded design rule checker. These capabilities are just some of the reasons why the majority of MMIC designers choose ADS to increase performance, consistency and yield.”
The OMMIC PDKs for their ED02AH (PHEMT), D01PH (PHEMT), D01MH (MHEMT), and D007IH (MHEMT) processes support a complete ADS front-to-back end MMIC design flow with scalable devices, native design rule checker and the latest layout capabilities in ADS 2011.
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OMMIC launches new 75-110 GHz Low Noise Amplifier- september. 2010
EuMW 2010, September 2010, Paris, France
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Paris, 27th September 2010
IEEE EuMW2010, Paris, France, 27th September 2010 - OMMIC announces the release of its production 75 – 110 GHz Low Noise Amplifier, the CGY2190UH.
The CGY2190UH is a four stage ultra-Low Noise Amplifier operating in the band 75 – 110 GHz with typically 23 dB of gain and a Noise Figure of 2.8 dB at 90 GHz. The MMIC is an exceptionally low Power Consumption device, running from a 1 V supply with 30 mA of current.
This MMIC has been designed for use in Active and Passive millimetre wave Imaging Systems operating in the W-band. It is also very well suited to Short Haul High Capacity Links in Band E.
The MMIC is manufactured using OMMIC’s proprietary 0.07 ?m MHEMT D007IH technology. The MHEMT process gives InP like performance on a GaAs substrate – combining the performance of InP with the production maturity of GaAs substrates.
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OMMIC launches new X-band integrated CoreChip- september. 2009
IMS 2010, May 2010, Anaheim, U.S.A.
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Anaheim, 25th May 2010
IEEE MTT-S IMS2010, Anaheim, USA, 25th May 2010 - OMMIC announces the release of a new
X-band integrated Core Chip for T/R functions.
This new device, called the CGY2170XUH, is the next generation of the previous
X-band Core Chip. The MMIC is more versatile and consumes less power than the
previous generation of Core Chips. It is ideal for all X-band Radar applications –
Civil, Space and Military.
Covering the 8 – 12 GHz frequency band, the MMIC contains a 6-bit attenuator, 6-
bit phase shifter and 2 SPDT switches. An on-chip CMOS/TTL compatible Serial to
Parallel converter means that only 3 bonding pads are required to control the digital
phase shifter and attenuator. Total power consumption is less than 40 mW.
The technology used to fabricate the MMIC has a long space heritage and is on
ESA's European Preferred Parts List. Demonstration boards and samples are available.
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OMMIC launches new GaN on Si HEMT Technology- september. 2009
EuMW 2009, September 2009, Rome, Italy
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Rome, 29th September 2009
EumW2009, Rome, Italy, 29th September 2009 - OMMIC announces that it has started development of
a Short Gate Length GaN on Si HEMT Technology
First wafers have been successfully processed and have shown the compatibility between the GaN on
Si substrates and the standard processing modules of OMMIC’s 130 nm PHEMT Power Technology.
The new Technology, called the D01GH, will have a similar ft (90 GHz) and fmax (180 GHz) as
OMMIC’s conventional PHEMT technology but with twice the guaranteed breakdown voltage (25 V).
Derek Smith, OMMIC’s Director of Marketing and Sales comments that this new technology
complements OMMIC’s existing millimetre wave processes and product line and will allow OMMIC to
provide Power Amplifiers at up to 10 W at 30 GHz and 0.5 W at 94 GHz. Furthermore this technology
is fully compatible with OMMIC’s future 6-inch facility currently being completed.
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OMMIC launches a new Ultra Low Noise, High Linearity, Application Board at 2.5 – 2.7 GHz- october. 2008
EuMW 2008, October 2008, Amsterdam, Netherlands
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Amsterdam, 28th October 2008
EumW2008, Amsterdam, Netherlands, 28th October 2008 - OMMIC announces the introduction of a
new Reference Design (Application Board) at 2.5 GHz. This reference design is particularly targeted at
new applications such as the 4 G mobile standard Long Term Evolution (LTE) and WiMAX base
stations in the 2.5 – 2.7 GHz band, but can also be used for other cellular standards.
The Reference Design is based on OMMIC’s new dual LNA the CGY2105XHV. The application board
has 18.5 dB of gain and an exceptionally low noise figure of 0.5 dB and high Output IP3 of 32 dBm at
2.5 GHz measured at the board SMA connectors. A 5 V supply is required and the total current
consumption is 100 mA. The excellent component tracking of the dual LNA MMIC combined with 3 dB
couplers provide Input and Output matching of better than 20 dB. The 3 dB bandwidth of the board is
from 1.6 to 3.1 GHz.
Samples of the CGY2105XHV and the 2.5 GHz application boards are available from stock.
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OMMIC launches new X-band Phase Shifter MMIC- october. 2008
EuMW 2008, October 2008, Amsterdam, Netherlands
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Amsterdam, 28th October 2008
EumW2008, Amsterdam, Netherlands, 28th October 2008 - OMMIC announces the introduction of a
new phase shifter MMIC for X-band applications. Applications for the new device include Weather and
Military Radars, Satellite Communications and Phased Array Applications in general.
The CGY2172XUH is a 6-bit phase shifter MMIC with a LSB of 5.625 ° that covers the band 8–12
GHz. The phase shifter has an insertion loss of 8 dB with a RMS phase error of only 2° at 10 GHz and
excellent input and output matching of – 17 dB. The attenuation error with phase setting is extremely
low and does not exceed a maximum peak value of 0.25 dB. The MMIC is available with either a
TTL/CMOS compatible interface (0/5V) or direct drive of the phase shifter (0/-3V).
The MMIC is fabricated using OMMIC’s standard 0.13 ?m PHEMT process. This process has been
evaluated by the European Space Agency for Flight Models and is on the European Preferred Parts
List.
Samples and demonstration boards are available
from stock.
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OMMIC launches new High Linearity dual LNAs for Wireless Infrastructure- june. 2008
IEEE MTT-S IMS 2008, June 2008, Atlanta, USA
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Atlanta, 17th June 2008
IMS2008, Atlanta, Georgia, 17th June 2008 - OMMIC announces the introduction of two new High
Linearity dual Low Noise Amplifiers (LNAs) for the Wireless Infrastructure and Base Station Market to
its product catalogue. These devices are compatible with numerous standards including GSM, PCS,
CDMA and W-CDMA.
The CGY2105XHV and CGY2106XHV are the highest performance LNAs available on the market
today. The CGY2105XHV exhibits a single ended Noise Figure of 0.27 dB and a Noise Figure of 0.42
dB and Output IP3 of 35 dBm with 19 dB of gain at 1.9 GHz when used in a balanced configuration
with on board SMD couplers (including the connector, coupler and matching losses). Similarly the
CGY2106XHV exhibits a single ended Noise Figure of 0.29 dB and a Noise Figure of 0.44 dB and
Output IP3 of 36.5 dBm with 19 dB of gain at 900 MHz when used in a balanced configuration with on
board SMD couplers (including the connector, coupler and matching losses).
The devices are packaged in plastic QFN packages and use OMMIC’s fully released 0.13 ?m PHEMT
technology. The excellent tracking between each of the LNAs on the MMIC insures an excellent S11
and S22 when used in a balanced configuration (typically - 25 dB).
Samples and demonstration boards are available
from stock.
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OMMIC launches a new family of Double
Balanced Wide Band Mixers - march. 2007
RF & Hyper Europe 2007, 27-29 March 2007, CNIT la Défense,
Paris, FRANCE
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Paris, 27th March 2007
RF & Hyper 2007, la Défense, Paris, 27th March
2007 - OMMIC announces the introduction of a new family of high
performance Wide Band Double Balanced Mixers covering the band
0.7 GHz to 10 GHz. These MMICs are ideal for use in GPS, Telecommunication,
Radar, EW and Instrumentation applications.
The CGY2180UH, CGY2181UH, CGY2182UH use on chip
baluns to provide excellent rejection of the LO to the RF and
IF paths of > 40 dB while the passive mixer structure gives a
very high dynamic range with an Input 1 dB Compression Point of
> 12 dBm. The CGY2180UH was designed to operate from 0.7 GHz to
3.7 GHz and is ideal for GPS applications such as the European
Galileo System. The CGY2181UH operates from 1 GHz to 4.5 GHz and
the CGY2182UH from 3 GHz to 10 GHz.
These die are manufactured using OMMIC's 0.18
µm gate length PHEMT Technology. The MMIC uses gold bonding pads
and backside metallization and is fully protected with Silicon
Nitride passivation to obtain the highest level of reliability.
Samples and demonstration boards are available
from stock.
These MMICs have been developed in the framework
of the European Space Agency's "European Component Initiative"
with the participation of Alcatel Alenia Space.
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OMMIC launches Attenuator and Phase
Shifters for C-Band - sept. 2006
European Microwave Week 2006, 12-14 September 2006, GMEX
/ MICC, Manchester, UK
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Manchester, 12th September 2006
European Microwave Week, Manchester, UK, 12th
September 2006 - OMMIC announces the introduction of 2 new circuits
in its family of products of Control Functions for Military, Civil
and Telecommunication Applications.
The CGY2176AUH is a 6-bit Digital Attenuator
with excellent performance from 4.5 - 6.5 GHz. Typical Insertion
Loss is 5 dB at 5 GHz. Robust on-chip circuitry provides easy
to use CMOS compatible interfacing with low power consumption.
The CGY2177AUH is a 6-bit Digital Phase Shifter
with excellent performance from 4.5 - 6.5 GHz. Typical Insertion
Loss is 5 dB at 5.5 GHz. Robust on-chip circuitry provides easy
to use CMOS compatible interfacing with low power consumption.
Using OMMIC's unique 0.18 µm E/D Mode PHEMT technology
allows the design of smart interfacing that is robust and low
power consumption. This technology is used for higher volume commercial
LNA production as well as Military and Space Payload applications.
These devices are part of OMMIC's chip set for
active antennas in C-band and X-Band that include fully integrated
core chip MMICs as well as separate phase shifters, attenuators
and Amplifier MMICs.
Samples and demonstration boards are available.
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OMMIC launches
a new High Gain, Low Noise Amplifier for C-Band -
march. 2006
RF & Hyper Europe 2006, 21-23 March 2006, CNIT la Défense,
Paris, FRANCE |
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Paris, 21st March 2006
RF & HYPER, la Défense, Paris, 21st March 2006
- OMMIC announces the introduction of the CGY2178UH a Low Noise
- very High Gain Amplifier for use in C-Band applications (5 -
6 GHz).
The CGY2178UH achieves an excellent noise figure
(1 dB), matching (<-15 dB) and a high gain (30 dB) in C-Band using
a fully integrated amplifier with a simple and robust external
input matching circuit. Operating from 3 V and 40 mA the CGY2178UH
provides an output 1dB compression point of 15 dBm and an output
IP3 of 22 dBm.
Based on its experience in supplying ultimate
performance LNAs to the Base Station Market using a fully qualified
180 nm PHEMT technology and its recent developments in Phased
Array Antenna MMICs, OMMIC has been able to design a robust and
high performance LNA perfectly suited to C-Band applications.
This LNA forms part of OMMIC's chip set for active
antennas in C-band that includes a fully integrated core chip
MMIC as well as separate phase shifters and attenuators MMICs.
Samples and demonstration boards are available.
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OMMIC launches
a new range of products including phase shifters, attenuators
and complete integrated core chips - oct. 2005
European Microwave Week 2005, 4-6 October 2005, CNIT la Défense,
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Paris, 3rd October 2005
European Microwave Week, la Défense, Paris,
3rd October 2005 - OMMIC announces the introduction of a new range
of products to its catalogue. These include 6-bit phase shifters,
6-bit attenuators and complete integrated core chips at X-band
and C-band.
The new range of products takes advantage of
OMMIC's unique 0.18 mm enhancement-depletion process which allows
the complete integration of functions including phase shifters,
attenuators, switches, amplifiers and also include on-chip low
power consumption digital circuitry such as a series to parallel
data converter. This allows complex functions to be designed that
have very simple interfacing.
First products include the CGY2170UH and CGY2175UH
which are fully integrated "Core Chip" functions for Phase Array
Radar at X-band and C-band respectively. Both circuits are controlled
via a series data bus (data, clock, enable) with on chip series-in
parallel-out (SIPO) conversion to control the 6-bit phase shifters,
6-bit attenuators and T/R switches. The CGY2170UH is available
for sampling.
Separate attenuators and phase shifters, with
and without control circuits, are also in development for X-band
and C-band applications. The CGY2171UH and CGY2172UH, X-band attenuator
and phase shifter respectively, are available for sampling.
Marc Rocchi, OMMIC's CEO, comments "this is natural
extension of OMMICs product catalogue to an area where we have
worked for many years with our partners and customers. We see
a great demand for these products not only from the space and
military but also for commercial products in the future."
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OMMIC launches
a new Low Noise Amplifier for Base Stations -
oct. 2005
European Microwave Week 2005, 4-6 October 2005, CNIT la Défense,
Paris, FRANCE |
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Paris, 3rd October 2005
European Microwave Week, la Défense, Paris,
3rd October 2005 - OMMIC announces the introduction of the CGY2109HV
a very Low Noise - very High Linearity amplifier for Base Stations.
This product further extends OMMIC's LNAs for base stations and
is suitable for all GSM, DCS, PCS and W-CDMA applications.
The CGY2109UH achieves an excellent noise figure
and gain from 100 MHz to 3 GHz while simultaneously providing
a high IP3. This device is a dual LNA, with 2 amplifiers fabricated
on the same die, with outstanding tracking between the two circuits.
The plastic packaged (QFN) dual LNA is delivered as fully RF tested
product.
At 1.9 GHz the demonstration board has a gain
of 19 dB, 0.5 dB noise figure and an input IP3 of 11 dBm. Used
in a balanced configuration, the CGY2109UH will allow a complete
amplifier noise figure (including all connector, coupler and matching
losses) of 0.6 dB and an output IP3 of 33 dBm with input and output
matching better than - 25 dB.
Samples and demonstration boards are available.
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OMMIC launches
a new Centre of Excellence in Belfast - oct.
2005
European Microwave Week 2005, 4-6 October 2005, CNIT la Défense,
Paris, FRANCE |
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Paris, 3rd October 2005
European Microwave Week, la Défense, Paris,
3rd October 2005 - OMMIC announces the signing of a MoU (Memorandum
of Understanding) with Queen's University of Belfast High Frequency
Electronics Research Group (HFE), who will act as an OMMIC European
Centre of Excellence for MMIC Research and Design.
The purpose of these Centres of Excellence is
to jointly extend the development capacity of the Industrial and
University Communities by enhancing the interface between Research,
Design, Fabrication and Measurement.
Professor Vincent Fusco, Director of High Frequency
Research said "this agreement represents a significant development
which will permit joint opportunities for innovation in key areas
of advanced microwave telecommunication technology and will grant
access to OMMIC's most advanced processes."
Derek Smith, OMMIC Marketing and Sales Director
comments "Queen's HFE Group has a significant research, design
and prototyping resource and has already demonstrated its ability
to successfully design MMIC products using OMMIC's processes.
This collaboration will improve time to market, provide additional
support for customers and enhance our joint research efforts."
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| OMMIC announces
the release of a new product for its defence and Instrumentation
Product Line - oct. 2004 |
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Amsterdam, 11th October 2004
EuMW04, Amsterdam, 11th October 2004 - OMMIC
adds a new ultra wideband amplifier to its product portfolio.
This device is based on OMMIC's extensive knowledge on low noise
and driver amplifiers for 40 Gb/s optical transmission systems
and provides an excellent noise figure and compression point up
to 45 GHz.
The CGY2160UH has a bandwidth of 1.5 to 45 GHz
and provides a high gain of 15 dB. This MMIC has an excellent
mid-band noise figure of 2.5 dB and delivers 18 dBm of P1dBm at
20 GHz and 15 dBm at 40 GHz. The power consumption is only 500
mW and requires no external biasing networks. Good input and output
matching to 50 W is achieved and unconditional stability is guaranteed
over the entire frequency, biasing and temperature range.
Typical applications for this product are Electronic
Warfare systems, Radar and Counter Measures, Instrumentation and
as a general purpose wide band gain block.
The CGY2160UH is fabricated using OMMIC's standard
130 nm power PHEMT Space Qualified process. Samples and datasheets
are available.
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| OMMIC announces
the release of 2 new products to its 10Gb/s Fibre Optic Interface
Product Line - oct. 2004 |
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Amsterdam, 11th October 2004
EuMW04, Amsterdam, 11th October 2004, OMMIC announces
the introduction of 2 new products to its family of optical interfacing
circuits working up to 10.7 Gb/s. These products offer improved
overall performance and are well suited to the ever more demanding
specifications required by 10 Gb/s optical systems.
The CGY2115 is available as a bare die (CGY2115UH)
or in a small profile QFN16 plastic package (CGY2115HV) and is
designed to drive an electro-absorption modulator (EAM) at speeds
up to 10.7 Gb/s. The bare die version has a rise time of 19 ps
and a fall time of 14 ps while the packaged device has excellent
rise time and fall times of 27 ps and 24 ps respectively. The
devices have on chip biasing networks, voltage offset controls
and cross-point controls to enable easy interfacing to the EAM.
The circuit operates from a single - 5.2 V supply and delivers
up to 3 Vpp voltage swing and a 1 V bias offset to the EAM.
The CGY2116UH is a very high performance Transimpedance
Amplifier (TIA) for 10.7 Gb/s and completes OMMIC's family of
interface products for fibre optic communications. It combines
an exceptional sensitivity of - 22 dBm with on chip AGC to provide
a high input overload of > 2.5 mA. This new product has a bandwidth
of 9.5 GHz, a high differential transimpedance gain of 74 dBW
and a group delay of less than ±25 ps up to 10GHz. The power consumption
is typically 400 mW from a single + 5 V supply.
Both devices are fabricated using OMMIC's space
qualified 180 nm Enhancement-Depletion Mode PHEMT technology.
Samples and datasheets available on request.
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| Alcatel transfers
advanced Indium Phosphide (InP) technology to OMMIC for development
of new Microelectronic circuits - dec. 2003
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Paris, 1st December 2003
Alcatel (Paris: CGEP.PA and NYSE: ALA) and OMMIC
announced today that they are collaborating on the transfer of
Alcatel's advanced Indium Phosphide (InP) Heterojunction Bipolar
Transistor (HBT) technology to OMMIC's Industrial Clean Rooms
at its centre in Limeil-Brévannes, France. This transfer will
complete OMMIC's commercial portfolio of III-V technologies and
will provide Alcatel's System designers with a qualified source
to develop 40 Gbit/s transmission systems for core networks.
InP, now well established as the choice material
for long wavelength (1.3 -1.6 µm) optoelectronic devices, is receiving
an increasing interest for its potential in microelectronic applications,
ranging from millimetre-wave space and terrestrial communication
systems, to very high bit rate fibre transmission systems (e.g.
10 and 40 Gbit/s).
The InP HBT technology was developed by the Alcatel
Research & Innovation Department in the framework of its studies
into 40 Gb/s transmission. On top of the normal advantages of
the conventional bipolar transistor (high current drive capability,
very low threshold voltage dispersion…), this InP DHBT process
(actually a Double Heterojunction Bipolar structure is used) offers
an exceptionally high cut-off frequency (greater than 200 GHz)
with a breakdown voltage higher than 5 V. Using this DHBT technology,
Alcatel has already developed prototype chip sets at 40 Gbit/s
that have shown excellent results including record breaking performances.
These circuits include full rate D-type Flip-Flops for reshaping
or decision circuits, multiplexer-drivers as well as Voltage Controlled
Oscillators.
OMMIC, already known for its unique enhancement-depletion
mode and high frequency power PHEMT and MHEMT technologies, will
now be one of the first foundries in the world to be able to offers
its customers access to a leading edge InP HBT process.
Marc Rocchi, COO and CTO of OMMIC commented "We
are delighted that we are going to be able to offer to our customers
this outstanding technology developed by Alcatel. OMMIC has based
its business on being able to provide technologies with real advantages
compared to our competitors. This new InP DHBT process fits in
exactly with our strategy and technology roadmap and will maintain
OMMIC's leadership in III-V processes."
Joëlle Gauthier, Vice-President of Alcatel Research
& Innovation, declared that "To prepare the future deployment
of 40 Gbit/s systems, Alcatel has to secure the industrial availability
of all required technologies, and we feel InP DHBT is one of them.
This is why OMMIC commitment to develop the InP DHBT process is
very good news for us."
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Double Success for OMMIC
in ISO9001/ISO14001 Accreditation - march. 2003
Paris, 31st March 2003
OMMIC has obtained the ISO 9001 version 2000
Certification for the Design and Manufacturing operations of its
III-V MMIC foundry as well as OMMIC's Epitaxial Wafer production
facility. This certification covers the newest version of the
ISO9001 standard that has adopted a process approach to quality
management which puts the customer and continual improvement at
the heart of the quality system.
OMMIC had already gained the ISO14001 environmental
management certification in May 2002 for its manufacturing clean
rooms and support facilities. The ISO14001 certification demonstrates
OMMIC's commitment to an environmentally friendly culture and
"green' manufacturing.
Marc Rocchi, OMMIC's Chief Operating Officer,
commented "This double success is a sign of OMMIC's commitment
to the highest quality level of its products, the satisfaction
of its staff, customers and local community. It has helped OMMIC
to improve its efficiency and profitability while maintaining
our objective of long term and sustainable growth. The ISO accreditations
are globally recognized standards that have been achieved due
to the tremendous effort and teamwork from the OMMIC Personnel
enabling us to have been certified for both ISO9001 and ISO14001
in less than 12 months."
OMMIC, which is part of the Philips Group of
Companies, is a leading supplier of MMIC circuits, Foundry Service
and Epitaxial Wafers based on III-V materials. The main markets
for the foundry and standard product line are Telecommunication
Applications such as Base Stations, Fibre Optic Links and Satellite
Payloads. The Epitaxial unit produces high volume 4" and 6" wafers
for PHEMT and HBT Foundries.
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OMMIC Launches a 10 Gb/s
TIA with exceptional dynamic range - march. 2003
Paris, 24th March 2003
OMMIC announced today at the OFC conference in
Atlanta, USA that it has released the latest addition to its chipset
for Fibre Optic Interfaces, a 10 Gb/s Transimpedance Amplifier
(TIA) called the CGY2112 which combines excellent sensitivity
and high optical overload.
The CGY2112 has the double advantage of an excellent
sensitivity of typically - 21 dBm with a PIN Photodiode, with
better than 2.5 mApp of overload capability. The on chip Automatic
Gain Control and final stage limiting function provide a clean
eye diagram up to the optical overload.
The TIA has differential outputs and provides
72 dBO of differential gain and a bandwidth of typically 9.5 GHz.
The CGY2112 uses a single +5 V supply and only 70 mA of current.
All devices are 100 % tested on wafer.
The CGY2112 is fabricated using OMMIC's state
of the art and unique dual-mode PHEMT 0.18 µm MMIC process.
Derek Smith, OMMIC's IC Marketing and Sales Manager,
commented "This new device combines OMMIC's technological lead
in device technology with a sound skill in advanced circuit design.
Our objective is to give our customers the circuits that will
enable them to build their modules with a real performance advantage.
Results from Key Customers who had access to pre-release samples
have confirmed the benefits of the CGY2112 in terms of sensitivity
and overload."
Applications for the CGY2112 include use in Fibre
Optic Modules (MSA300, XENPAK, XPAK, X2, XFP) for Short Reach,
Metro, Long-Haul and Ultra Long Haul optical receivers.
OMMIC, which is part of the Philips Group of
Companies, is a leading supplier of MMIC circuits, Foundry Service
and Epitaxial Wafers based on III-V materials. The main markets
for the foundry and standard product line are Telecommunication
Applications such as Base Stations, Fibre Optic Links and Satellite
Payloads. The Epitaxial unit produces high volume 4" and 6" wafers
for PHEMT and HBT Foundries.
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AWR and OMMIC announce support
for GaAs foundry Process - sept. 2002
European Microwave Conference, MILAN, Italy
- September 24, 2002
Applied Wave Research, Inc. (AWR), a leading
supplier of high-frequency electronic design automation (EDA)
tools, and OMMIC, formerly Philips Microwave Limeil (PML), today
announced plans to provide process design kit (PDK) library support
for OMMIC's gallium arsenide (GaAs) foundry process. Monolithic
microwave integrated circuit (MMIC) designers will use the libraries,
within AWR's Microwave Officeä 2002 environment, to speed the
design of high-end wireless and fibre optic infrastructures while
helping to ensure electrical specifications are met.
OMMIC is a member of the Philips group of companies
and is working on the leading-edge research, design, and manufacture
of GaAs semiconductor devices using integrated circuit (IC) and
epitaxy technologies. "OMMIC is committed to supporting state-of-the-art
MMIC design tools and, over the past four years, AWR has clearly
established itself as a leader within the GaAs MMIC market," said
Remy Leblanc, OMMIC foundry manager. "By working with AWR to integrate
GaAs process technology into the Microwave Office design flow,
we can offer MMIC designers a premier EDA tool for OMMIC technology-based
product development."
"We have a rapidly increasing number of customers
requesting support for the OMMIC GaAs foundry processes," said
Ted Miracco, AWRä executive vice president. "We are therefore
very pleased to be working with the OMMIC team in Paris to bring
this technology to our joint customers. This collaboration supports
our vision for streamlining the MMIC design process with improved
productivity through increased accuracy and integration.
" The PDKs will include validated electrical
models and parameterized layout cells that have been tested and
validated against OMMIC's design rules. "The quality of the EDA
package, such as AWR's Microwave Office design suite, and the
quality of the OMMIC developed libraries, becomes increasingly
more important with the introduction of higher-performance processes
and the need for a "right-first-time" design," continued Leblanc.
OMMIC has a long history of working as an open
foundry. The company's first external customers were using the
foundry service in 1986. Since then, OMMIC has introduced Psuedomorphic
High Electron Mobility Transistor (PHEMT) technologies and now,
advanced high indium content, indium phosphide (InP)-like Metamorphic
High Electron Mobility Transistor (MHEMT), while gate lengths
have been reduced from 0.7 µm to 0.13 µm in production, with research
at 0.07 µm. Access to these technologies is now available through
complete mask sets or shared runs.
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OMMIC 43 Gb/s ChipSet -
march 2002
Paris, 25th March 2002
OMMIC announces the launch of 2 high performance
MMICs for the Fibre Optic Interface market operating at data rates
of 43 Gb/s. The CGY2144 is a high sensitivity TIA (Transimpedance
Amplifier) and the CGY2141 a high output voltage driver amplifier.
Both devices operate from a +5 V supply and are manufactured using
OMMIC's fully released 0.13 µm PHEMT process.
The CGY2141 driver IC has a small signal gain
of 16dB and a 3 dB bandwidth of 50 GHz. At 30 GHz and with an
input voltage of 1 V the CGY2141 provides 5 V on a 50 Ohms load
and over 7 V with an input voltage of 2 V. The device is designed
for high efficiency and consumes only 900 mW with 5 V supply so
minimising thermal dissipation and current consumption.
The CGY2144 Transimpedance Amplifier is a very
wide-band, very high sensitivity device that runs from a single
+ 5 V supply with on chip biasing networks that make this TIA
very easy to use. A bandwidth of over 45 GHz (assuming a photodiode
with 50 fF of capacitance and 0.35 nH of Inductance) and 48 dBOhms
of Transimpedance gain is achieved. The measured noise performance
is better than 10 pA/vHz up to 25 GHz. This MMIC completes OMMIC's
range of very high sensitivity TIAs for data rates at 2.5 Gb/s,
10 Gb/s and 40 Gb/s.
Both MMICs are available as RF Characterised
Known Good Die (KGD). They form part of OMMIC's chip set for 43
Gb/s applications and have been developed using OMMIC's fully
released and mature 0.13 µm PHEMT technology.
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OMMIC announces the
availability of a 150 GHz MHEMT process
- sept. 2001
European Microwave Week 2001 24-28 September 2001
Paris, 21stb September 2001
OMMIC announces that it will be making available
to the open market its recently developed Metamorphic HEMT process
(MHEMT) as from October 2001. This process is ideally suited to
the market of advanced devices for the Opto-Electronic market
at data rates of 40 Gb/s and above where there is a need for technologies
with a high Ft associated with a high breakdown voltage.
The MHEMT technology builds on OMMICs already
successful PHEMT technologies and opens the path to exceptional
performance using standard GaAs wafers and advanced Epitaxial
Growth techniques.
OMMIC's MHEMT technology enables a Ft of 150
GHz to be obtained simultaneously with a breakdown voltage of
10V. The technology has all the standard options of a MMIC process
including small size back side Via Holes for low Inductance grounding.
This process can also be associated with OMMIC's state of the
art Bump process, a key element in simplifying packaging particular
at higher date rates.
The MHEMT process uses a 0.13 µm mushroom gate
which is placed asymmetrically in the Drain-Source spacing. This
combined with the double recess of the channel and optimised epitaxial
layers gives this process the high breakdown voltage without compromising
the Ft. The use of an optimised, high Indium content channel with
graded buffer layers allows OMMIC to have the high Ft of high
Indium content processes (such as InP) but to use conventional
GaAs wafers as a substrate. This gives the MHEMT process the advantage
of being compatible with standard GaAs processing and so is upgradeable
to 6 inch wafers and beyond. The GaAs substrate allows easy backside
processing and low wafer breakage.
OMMIC will be offering this advanced technology
to selected partners in 2001 through its MultiChip Project scheme
or via full customer mask sets. OMMIC has been a provider of foundry
services to the external market since the mid-1980's and has built
up a strong support team and knowledge of this business.
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New GaAs Device Company formed
- jan. 2000
GaAsNet : OMMIC is new operating name of a
new company formed from Philips Microwave Limeil (PML) 16 March
2000
A new company and a major force in GaAs semiconductor
technology has been created from Philips Microwave Limeil (PML).
Named OMMIC, the new company will build on PML’s lead position
in the research, development and manufacture of GaAs semiconductor
devices.
The management of OMMIC announced the operating
name of a new company formed from Philips Microwave Limeil (PML).OMMIC
will build upon the worldwide recognition of the former PMI leading-edge
work in research, design and manufacture of GaAs semiconductor
devices using IC and epitaxy technologies.
As OMMIC, the new company becomes self-reliant with enhanced flexibility
to fulfil its plans in expanding further in specialized applications,
primarily with high-frequency devices and systems for the telecoms
market. OMMIC, a wholly-owned Philips company, will continue to
have its headquarters in Limeil-Brevannes on the outskirts of
Paris.
In addition to capitalizing on the comprehensive
portfolio of products and services produced by PML, OMMIC intends
to expand its competencies in both foundry-produced MMICs and
devices manufactured through MOVPE reactor methods.
OMMIC also inherits the pioneering development work of PML in
building the world’s first planetary epitaxial reactor - licensed
for manufacture to the Aachen, Germany, based company Aixtron.
In this field, OMMIC has more than 15 years proven experience
in the growth of pHEMTs using MOVPE. In addition to the planetary
reactor, OMMIC holds more than 100 patents in GaAs production
technologies and processes. OMMIC’s current product portfolio
primarily comprises GaAs integrated circuits like pHEMT low-noise
amplifiers used in high-end wireless and fibre optic infrastructures.
The company also offers a comprehensive service in foundry and
epitaxy processes. Technology, development and production roadmaps
are in place for a range of innovative new products which will
fulfil the stringent demands of the telecoms and related markets
for the next five years.
Review of Elsevier’s III-Vs Review magazine
May-June 2000 issue – Vol. 13 No. 3
Philips Microwave Limeil (France) has formed
a new wholly-owned Philips company called OMMIC to do foundry-produced
MMICs and MOCVD-manufactured devices such as pHEMT low noice amps
for high end wireless and fibreoptic infrastructures, and foundry
and epitaxy services.
OMMIC inherits over 100 GaAs production and processing patents
which includes the license to Aixtron for the Planetary reactor.
Expansion will involve acquiring additional reactors. OMMIC tel:
33-1-45-10-6922
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