CGY2132UH/C1

 

500mW 37-41 GHz Power Amplifier

 

Package BW (GHz) Gain (dB) Psat(dBm) P1dB out (dBm)

Bias Current (mA)

Bias Voltage (V) Status Process
DIE 37-41 19 30 29.3 1450 4.5 Available D01PH

 

Description

The CGY2132UH/C1 is a PHEMT GaAs Power Amplifier with output power of 30dBm (1W) and more than 20dB of gain covering frequencies from 37 to 41 GHz.

The CGY2132UH is a 3 stage dual line-up architecture with lange couplers for power combining and excellent input and output matching.

The 1dB Compression point is 29.3 dBm with excellent linearity delivering OIP3 at 37 dBm. DC power supply is 4.5V and PAE 14%.

The CGY2132UH is manufactured using the D01PH GaAs PHEMT power process from OMMIC. This process has a 130nm gate length with a Ft 110Ghz and a Fmax of 180GHz.

The D01PH process used to manufacture the MMIC has been evaluated by ESA and is present in the EPPL (European Preferred Part List). This very reliable process is suitable to manufacture power amplifiers dedicated to flight models in aerospace applications as well as power amplifier for terrestrial applications.

 

Applications

  • High performance GaAs Power Amplifier
  • Earth-to-space or point-to-point radiolinks
  • Backhaul networks
  • Telecommunications
  • RF Driver for High Power Amplifiers

Features                                                

  • Usable frequency range from 37 to 41 GHz
  • Psat > 1W (+ 30dBm)
  • P1dB ~ 29.3 dBm
  • Gain ~ 20 dB
  • 50 Ohms input and output matched
  • Input and Output Return Loss better than -10dB
  • Uses a highly reliable PHEMT MMIC process
  • Delivered as 100 % on-wafer RF tested dies
  • Samples and evaluation Boards Available
  • Die size is 3.86 x 2.88 mm

 

   

The MMIC is available in the die form, OMMIC can deliver packaged version of the component.

CGY2132UH Power Amplifier block diagram

Datasheet

Application Note