CGY2139AUH/C1

 

8-12 GHz 40dBm High Power Amplifier

 

Package BW (GHz) Gain (dB) Psat(dBm) P1dB out (dBm)

Bias Current (A)

Bias Voltage (V) Status
DIE 8-12 23 40.5 39.6 3.9 8.5 Available

 

Description

The CGY2139AUH/C1 is a high performance 3 stages GaAs Power Amplifier MMIC designed to operate in the X band.

The CGY2139AUH/C1 has an output power of 10 W at the 1dB compression point and has a small signal gain of 21 dB. It can be used in X-band Radars, Telecommunication and Instrumentation applications.

The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

The MMIC power dissipation is limited by the die thermal resistance, it has been designed to work in pulse mode, The CGY2139AUH/C1 can be operated at a duty cycle as high as 25%. Drain switch mode is the preferred control mode.


 

Applications

  • Radar
  • Telecommunication
  • Instrumentation

 

 

 

 

Features                                                

  • Operating frequency range : 8 to 12 GHz
  • Output Psat : >  40.5dBm
  • Output P1dB : >  39.6dBm
  • Gain : 21dB
  • 50 Ohms input and output matched
  • Input Return Loss : > 10dB
  • Output Return Loss : > 10dB
  • Power Supply : 3.9A at 8.5V
  • Delivered as 100 % on-wafer RF tested dies
  • Samples and evaluation Boards Available
  • Die size = 4.5 x 4.1 mm
  • Device Availability (Q3 2012):
    • Tested, Inspected Known Good Die (KGD)
    • Connectorized evaluation solution
    • Demonstration Boards

  

CGY2139AUH/C1 High Power Amplifier Block Diagram

Datasheet

Application Note