CGY2178HV/C1

 

C band High Gain Low Noise Amplifier

 

Package BW (GHz) Gain (dB) NF (dB) P1dB out (dBm) Bias (mA) Bias (V) Status Process
QFN 5 - 6 30 1.1 15  40 3 Available ED02AH

 

Description

 

The CGY2178HV/C1 is a Plastic Packaged High Gain, Low Noise Figure Amplifier designed for use with the OMMIC Integrated Core chip, Attenuator/Phase Shifter Chip Set or as a general purpose Low Noise Amplifier in band C.

The CGY2178HV uses a simple external matching circuit to provide excellent input matching and low noise figure between 5 and 6 GHz. All biasing, decoupling and output-matching networks are on chip.

The die is manufactured using OMMIC’s 0.18 μm gate length PHEMT Technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

This technology has been evaluated for Space applications and is on the European Preferred Parts List of the European Space Agency.

 

 

 

Applications

  • Radar
  • Telecommunications
  • Instrumentation

 

Features    

                                           

  • C-band QFN Packaged LNA
  • Bandwidth : 5 - 6 GHz
  • Gain : 30 dB
  • Noise Figure : 1.1 dB
  • Output P1dB : 15 dBm
  • Bias : 3 V and 40 mA
  • S11, S22 : < - 10 dB (5–6 GHz)
  • Circuit size : 1.5 mm x 1.6 mm
  • Device Availability: 
    • Tested, Inspected Known Good Die (KGD)
    • Demonstration Boards

 

 

 

Datasheet

Application Note