OMMIC is supplying MMIC (Monolithic Microwave Integrated Circuit) based on III-V materials (GaN, GaAs and InP). The MMIC use gold bonding pads and backside metallization and are fully protected with Silicon Nitride passivation to get the highest level of reliability.
Check-out the performances of our products. Have any question ? Please contact us.
Our Power Amplifiers (PA) are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military applications. Some of our PA were manufactured using GaAs technology and some were designed in GaN for outstanding performances.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | Psat (dBm) | PAE (%) | BIAS CURRENT (A) | DRAIN VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
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18 | 23 | 23 | 23 | 15 | 0.4 | 4.5 | Die | - | Production | D01PH | |
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18 | 23 | 25 | 33 | 20.2 | 1.2 | 4 | Die |  |
Production | D01PH | |
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0.5 | 20 | 22 | 35 | - | 12 | Die | - | Development | D01GH | ||
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8 | 11 | 25 | 41.2 | 28 | 3.25 | 9 | Die | - | Production | D025PHS | |
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6 | 18 | 20 | 41 | 38 | 2 | 12 | Die | |
Sampling | D01GH | |
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13 | 17 | 30 | 40 | 41 | - | 12 | Die | - | Development | D01GH | |
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29.5 | 33.5 | 20 | 40 | 31 | 1.2 | 12 | Die | |
Production | D01GH | |
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37 | 43 | 22 | 41 | 35 | 2.7 | 12 | Die | |
Production | D01GH |
OMMIC portfolio includes transceiver MMIC. The T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN Rx/Tx (dB) | Tx POUT (dBm) | Rx NF (dB) | BIAS VOLTAGE (V) | BIAS CURRENT (A) | PACKAGE | BOARD | STATUS | PROCESS |
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26 | 34 | 20/20 | 36 | 2.7 | 12 | 0.45 | Die | |
Sampling | D01GH | |
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37 | 40 | 16/27 | 35 | 3.5 | 12 | 1.3 | Die | - | Demonstrator | D01GH |
Our Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies : mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | NOISE FIGURE (dB) | OP1dB (dBm) | BIAS CURRENT (mA) | BIAS VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
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0.5 | 4 | 19 | 0.42 | 35 | 100 | 5 | QFN 4x4 | - | Production | D01PH | |
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0.1 | 3 | 19 | 0.45 | 35 | 100 | 5 | QFN 4x4 | - | Production | D01PH | |
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0.5 | 6 | 24 | 0.5 | 36 | 100 | 5 | QFN 4x4 | - | Production | ED02AH | |
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0.5 | 6 | 21 | 0.6 | 36 | 100 | 5 | Hermetic Glass Seal | - | Production | ED02AH | |
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0.5 | 6 | 22 | 0.5 | 36 | 100 | 5 | QFN 4x4 | - | Production | D01PH | |
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5 | 7 | 13 | 0.5 | 12 | 1 | 50 | Die | - | Production | D007IH | |
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18 | 26 | 19 | 1.5 | 5 | 60 | 0.8 | Die | |
Production | D007IH | |
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25 | 43 | 32 | 1.5 | 1 | 30 | 1.1 | Die | - | Production | D007IH | |
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8 | 12 | 33 | 1.1 | 11 | 55 | 5 | Die | |
Production | D01PH | |
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13 | 15 | 25 | 1 | 8 | 20 | 3.3 | Die | - | Production | D01MH | |
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24 | 34 | 24 | 1.3 | 11 | 47 | 3.5 | Die | - | Production | D01MH | |
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5 | 6 | 30 | 1 | 15 | 40 | 3 | Die | - | Production | ED02AH | |
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75 | 110 | 23 | 3 | 1 | 33 | 1 | Die | - | Production | D007IH | |
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1 | 12 | 35 | 1.3 | 12 | 52 | 1.5 | Die | - | Production | D007IH | |
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7.5 | 13 | 16 | 1.6 | 17 | 82 | 5 | QFN 4x4 | - | Production | D01PH | |
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8 | 12 | 16 | 1.6 | 17 | 82 | 5 | Die | - | Production | D01PH | |
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8 | 12 | 20 | 1.5 | 20 | 160 | 8 | Die | |
Sampling | D01GH | |
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1 | 18 | 35 | 1.5 | 12 | 50 | 1.5 | Die | - | Production | D007IH | |
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26 | 34 | 20 | 1.6 | 17 | 90 | 8 | Die | |
Sampling | D01GH | |
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24 | 44 | 25 | 1.5 | 8 | 50 | 1.5 | Die | |
Production | D007IH | |
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44 | 70 | 25 | 2 | 5 | 40 | 1.1 | Die | - | Sampling | D007IH | |
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6 | 18 | 9 | 3.3 | 13 | 33 | 5 | Die | - | Production | ED02AH | |
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | NOISE FIGURE (dB) | OP1dB (dBm) | BIAS CURRENT (mA) | BIAS VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
Corechips are based on the integration in a single die of digital phase shifter, digital attenuator, LNA, MPA and switches for phased array antenna applications. Phase and gain are controlled through a Serial to Parallel interface on the die (called SIPO).
| PRODUCT | DSDatasheet / QTGet a quote ! | ACCESS | FREQ. MIN (GHz) | FREQ. MAX (GHz) | INTERFACE | BITS | RMS | ATTENUATION / PHASE RANGE | PACKAGE | BOARD | STATUS | PROCESS |
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3 ports | 8 | 12 | CMOS, Serial | 6 | 0.5 dB / 4° | 31.5 dB / 360° | QFN 7x7 | |
Production | ED02AH | |
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3 ports | 8 | 12 | CMOS, Serial | 6 | 0.4 dB / 3° | 31.5 dB / 360° | Die | |
Production | ED02AH | |
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3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.5 dB / 2° | 31.5 dB / 360° | QFN 7x7 | |
Production | ED02AH | |
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3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.2 dB / 1.3° | 31.5 dB / 360° | Die | |
Production | ED02AH | |
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2 Ports | 12 | 15 | Serial | 6 | 0.5 dB / 11.25° | 15 dB / 348.8° | Die | - | Production | ED02AH | |
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2 Ports | 34 | 36 | Serial | 5 | 0.5 dB / 5° | 15 dB / 348.8° | Die | |
Production | ED02AH | |
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2 Ports | 26.5 | 30.5 | Serial | 6 | 0.5 dB / 4° | 22 dB / 360° | Die | - | Production | ED02AH |
| PRODUCT | DSDatasheet / QTGet a quote ! | FUNCTION | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | NOISE FIGURE (dB) | OP1dB (dBm) | BITS | PHASE ERROR RMS (°) | PACKAGE | BOARD | STATUS | PROCESS |
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4 bits PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | QFN | - | Production | ED02AH | |
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4 bit PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | Die | - | Production | ED02AH |
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | BITS | MIN DELAY (ps) | FULL DELAY (ps) | INSERTION LOSS (dB) | CTRL INTERFACE (V) | PACKAGE | BOARD | STATUS | PROCESS |
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6 | 18 | 5 | 10 | 310 | 6 | 0 / +4 | Die | |
Production | ED02AH | |
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6 | 18 | 1 | 330 | 330 | 6 | 0 / +4 | Die | |
Production | ED02AH |
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | PHASE CONTROL (°) | INSERTION LOSS (dB) | IP1dB (dBm) | BITS | PHASE ERROR RMS (°) | INTERFACE | PACKAGE | BOARD | STATUS | PROCESS |
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8 | 12 | 360 | 8 | 18 | 6 | 2 | 0 / -3 V | Die | |
Production | ED02AH | |
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8 | 12 | 360 | 8 | 18 | 6 | 3 | 0 / +5 V | Die | - | Production | ED02AH | |
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6 | 18 | 360 | 13 | 27 | 6 | 4 | 0 / -3 V | Die | |
Production | ED02AH | |
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14 | 16 | 360 | 8 | 20 | 6 | 6 | 0 / -3 V | Die | - | Production | ED02AH | |
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4.8 | 6.8 | 360 | 5 | 20 | 6 | 2 | 0 / +5 V | Die | - | Production | ED02AH | |
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6 | 18 | 360 | 10.8 | 20 | 6 | 1.09 | 0 / +5 V | QFN 5x5 | - | Production | ED02AH | |
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6 | 18 | 360 | 10.8 | 20 | 6 | 1.7 | 0 / +5 V | Die | |
Production | ED02AH |
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | AMPLITUDE CONTROL (dB) | INSERTION LOSS (dB) | IP1dB (dBm) | BITS | RMS ATTEN. (dB) | CTRL INTERFACE (V) | PACKAGE | BOARD | STATUS | PROCESS |
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10 | 18 | 23.5 | 4 | 20 | 6 | 0.40 | 0 / -3 V | Die | - | Production | ED02AH | |
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1 | 15 | 31.5 | 5 | 20 | 6 | 0.25 | 0 / +3 V | Die | - | Production | ED02AH | |
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1 | 8 | 31.5 | 5.6 | - | 6 | 0.20 | 0 / +5 V | Die | - | Production | ED02AH | |
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6 | 18 | 35 | 2.2 | - | 3 | 0.20 | 0 / +5 V | Die | - | Production | ED02AH |
Our Wideband Amplifiers are manufactured using OMMIC 130 nm gate length pHEMT technology D01PH or 100 nm HEMT technology D01GH. OMMIC wideband amplifiers are dedicated to application such as instrumentation, electronic warfare, 43 Gb/s OC-768 EAM Driver.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | NOISE FIGURE (dB) | P1dB OUT (dBm) | SUPPLY CURRENT (A) | SUPPLY VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
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0.01 | 46 | 16 | 2 | 21 | 195 | 5 | Die | - | Production | D01PH | |
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0.01 | 54 | 13 | 2.5 | 15 | 100 | 5 | Die | - | Production | D01PH | |
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0.5 | 45 | 13 | 2.6 | 18 | 85 | 5 | Die | - | Production | D01PH | |
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1.5 | 47 | 15 | 2.5 | 19 | 103 | 5 | Die | - | Production | D01PH |
Our Wideband Mixers are manufactured using OMMIC’s GaAs 180 nm E/D pHEMT (ED02AH) and 70 mm mHEMT (D007IH) technologies. They generally feature high isolation and can be used for application such as radar, telecommunication, instrumentation and GPS system.
| PRODUCT | DSDatasheet / QTGet a quote ! | CONVERTER | FREQ. MIN (GHz) | FREQ. MAX (GHz) | LO FREQUENCY (GHz) | IF FREQUENCY (GHz) | LO INPUT POWER (dBm) | CONV. GAIN (dB) | OP1dB (dBm) | PACKAGE | BOARD | STATUS | PROCESS |
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Up & Down | 0.7 | 3.7 | 0.7 - 4 | DC - 2 | 12 | -7 | 5 | Die | - | Production | ED02AH | |
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Up & Down | 1 | 4.5 | 1-5 | DC - 2 | 15 | -7 | 6 | Die | - | Production | ED02AH | |
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Up & Down | 3 | 10 | 3-10 | DC - 3 | 15 | -7 | 5 | Die | - | Production | ED02AH | |
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Active Down | 0.1 | 6 | 0.1 - 6 | DC - 3 | -5 | 11 | -5 | Die | - | Production | ED02AH | |
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Active Down | 0.1 | 6 | 0.1 - 6 | DC - 3 | 0 | 18 | 3 | Die | - | Production | ED02AH | |
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Down | 40.5 | 43.5 | 8.8 - 10 | 5 - 6 | 9 | 33 | 0 | Die | - | Production | D007IH | |
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Up | 92 | 96 | 86 - 90 | 5.1 - 6 | 7 | -3 | 2 | Die | - | Production | D007IH | |
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Down | 92 | 96 | 86 - 90 | 5.2 - 6 | 10 | -10 | 5 | Die | - | Production | D007IH |
Our switches portfolio includes discrete components from single-pole-single-throw (SPST) to single-pole-dual-throw (SPDT). These switch products showcase a great isolation, low losses and large power handling. They are designed using GaAs or GaN HEMT technologies.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | ISOLATION (dB) | INSERTION LOSS (dB) | SWITCHING SPEED (ns) | PACKAGE | BOARD | STATUS | PROCESS |
|---|---|---|---|---|---|---|---|---|---|---|
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92 | 96 | 35 | 2.2 | 10 | Die | - | Production | D01MH | |
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6 | 18 | > 50 | 1.5 | - | Die | - | Production | ED02AH |
The transimpedance amplifier MMIC is a voltage converter, almost exclusively implemented with one or more amplifiers.
| PRODUCT | DSDatasheet / QTGet a quote ! | FUNCTION | DATA RATE (Gb/s) | DIFF GAIN (dBΩ) | INPUT OVER-LOAD (mApp) | ON CHIP AGC | CURRENT (mA) | POWER SUPPLY (V) | PACKAGE | BOARD | STATUS | PROCESS |
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Differential Output TIA | 2.5 | 76 | 2.5 | Yes | 45 | +3.3 | Die | - | Production | ED02AH | |
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Differential Output TIA | 10 | 72 | 2.0 | Yes | 70 | +5.0 | Die | - | Production | ED02AH | |
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Differential Output TIA | 10.7 | 72 | 2.5 | Yes | 70 | +5.0 | Die | - | Production | ED02AH | |
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Differential Output TIA | 10.7 | 74 | 2.5 | Yes | 83 | +5.0 | Die | - | Production | ED02AH | |
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TIA | 43 | 49 | 3.5 | No | 100 | +5.0 | Die | - | Production | D01PH |
OMMIC portfolio includes resonant interband tunnel diodes with great sensitivity. The diode can be used to detect small signals and are a great match to OMMIC’s LNAs.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | SENSITIVITY (mV/uW) | IRL (dB) | BREAKDOWN VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
|---|---|---|---|---|---|---|---|---|---|---|
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80 | 110 | 9 | -15 | >2 | Die | - | Sampling | RITDM |
Our MMIC portfolio includes Multipliers for radar or communication applications. Multipliers are manufactured using GaAs technology (D01MH), that is space qualified by the European Space Agency (ESA). For more information, please contact us.
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | MULTIPLICATION | ISOLATION (dB) | OUTPUT POWER (dBm) | PACKAGE | BOARD | STATUS | PROCESS |
|---|---|---|---|---|---|---|---|---|---|---|
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11 | 11.5 | x8 | 20 | 5 | Die | - | Production | D01MH |
Our portfolio includes Gain Block Amplifiers for industrial applications, wireless infrastructure, aerospace and defense. Gain Blocks are manufactured using GaAs technology (D01PH), that is space qualified by the European Space Agency (ESA).
| PRODUCT | DSDatasheet / QTGet a quote ! | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | NOISE FIGURE (dB) | OUTPUT POWER (dBm) | PACKAGE | BOARD | STATUS | PROCESS |
|---|---|---|---|---|---|---|---|---|---|---|
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12 | 15 | 19 | 4 | 10 | Die | - | Production | D01PH |
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