ALL PRODUCTS

CUTTING EDGE TECHNOLOGY AVAILABLE

OMMIC is supplying MMIC (Monolithic Microwave Integrated Circuit) based on III-V materials (GaN, GaAs and InP). The MMIC use gold bonding pads and backside metallization and are fully protected with Silicon Nitride passivation to get the highest level of reliability.

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POWER AMPLIFIERS

OMMIC’s Power Amplifiers (PA) are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military applications. Some of our PA were manufactured using GaAs technology and some were designed in GaN for outstanding performances.

PERFORMANCE TABLE FOR POWER AMPLIFIER MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) DRAIN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2135UH/C1
18 23 25 33 20.2 1.2 4 Die Production D01PH
CGY2631UH
6 18 20 40 38 2 12 Die Sampling D01GH
CGY2650UH/C1
29.5 33 20 40 31 1.2 12 Die Production D01GH
CGY2651UH/C1
37 43 20 40 35 2.7 12 Die Production D01GH

T/R CHIPS

OMMIC portfolio includes transceiver MMIC. T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.

PERFORMANCE TABLE FOR T/R CHIP MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN Rx/Tx (dB) Tx POUT (dBm) Rx NF (dB) BIAS VOLTAGE (V) BIAS CURRENT (A) PACKAGE BOARD STATUS PROCESS
CGY2750UH
26 34 20/20 36 2.7 12 0.45 Die Sampling D01GH
CGY2760UH
37 40 16/27 35 3.5 12 1.3 Die - Demonstrator D01GH

LOW NOISE AMPLIFIERS

OMMIC’s Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies : mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.

PERFORMANCE TABLE FOR LOW NOISE AMPLIFIER MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2105XHV
0.5 4 19 0.42 35 100 5 QFN 4x4 - Production D01PH
CGY2106XHV
0.1 3 19 0.45 35 100 5 QFN 4x4 - Production D01PH
CGY2107HV
0.5 6 24 0.5 36 100 5 QFN 4x4 - Production ED02AH
CGY2108GS
0.5 6 21 0.6 36 100 5 Hermetic Glass Seal Production ED02AH
CGY2108HV
0.5 6 22 0.5 36 100 5 QFN 4x4 - Production D01PH
CGY2120XUH/C1
5 7 13 0.5 12 1 50 Die - Production D007IH
CGY2121XUH/C2
18 26 19 1.5 5 60 0.8 Die Production D007IH
CGY2122XUH/C2
25 43 32 1.5 1 30 1.1 Die - Production D007IH
CGY2124UH/C1
8 12 33 1.1 11 55 5 Die Production D01PH
CGY2125AUH/C1
13 15 25 1 8 20 3.3 Die - Production D01MH
CGY2128UH/C2
24 34 24 1.3 11 47 3.5 Die - Production D01MH
CGY2178UH/C1
5 6 30 1 15 40 3 Die - Production ED02AH
CGY2190UH/C2
75 110 23 3 1 33 1 Die - Production D007IH
CGY2220UH/C1
1 12 35 1.3 12 52 1.5 Die - Production D007IH
CGY2221HV/C1
7.5 13 16 1.6 17 82 5 QFN 4x4 - Production D01PH
CGY2221UH/C1
8 12 16 1.6 17 82 5 Die - Production D01PH
CGY2222UH
8 12 20 1.5 20 160 8 Die Sampling D01GH
CGY2230UH/C1
1 18 35 1.5 12 50 1.5 Die - Production D007IH
CGY2250UH
26 34 20 1.6 17 90 8 Die Sampling D01GH
CGY2260UH/C1
24 44 25 1.5 8 50 1.5 Die Production D007IH
CGY2272UH
44 70 25 2 5 40 1.1 Die - Sampling D007IH
CGY2290SUH/C1
6 18 9 3.3 13 33 5 Die - Production ED02AH
PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS

WIDEBAND AMPLIFIERS

Wideband Amplifiers are manufactured using OMMIC 130 nm gate length pHEMT technology D01PH or 100 nm HEMT technology D01GH. OMMIC wideband amplifiers are dedicated to application such as instrumentation, electronic warfare, 43 Gb/s OC-768 EAM Driver.

PERFORMANCE TABLE FOR WIDEBAND AMPLIFIER MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) SUPPLY CURRENT (A) SUPPLY VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2141UH/C1
0.01 46 16 2 21 195 5 Die - Production D01PH
CGY2144UH/C2
0.01 54 13 2.5 15 100 5 Die - Production D01PH
CGY2145UH/C1
0.5 45 13 2.6 18 85 5 Die - Production D01PH
CGY2160UH/C1
1.5 47 15 2.5 19 103 5 Die - Production D01PH

GAIN BLOCK AMPLIFIERS

Our portfolio includes Gain Block Amplifiers for industrial applications, wireless infrastructure, aerospace and defense. Gain Blocks are manufactured using GaAs technology (D01PH), that is space qualified by the European Space Agency (ESA).

PERFORMANCE TABLE FOR GAIN BLOCK AMPLIFIER MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OUTPUT POWER (dBm) PACKAGE BOARD STATUS PROCESS
CGY2731UH/C1
12 15 19 4 10 Die - Production D01PH

CORECHIPS

Corechips are based on the integration in a single die of digital phase shifter, digital attenuator, LNA, MPA and switches for phased array antenna applications. Phase and gain are controlled through a Serial to Parallel interface on the die (called SIPO).

PERFORMANCE TABLE FOR CORECHIPS (PS + ATT)

PRODUCT DSDatasheet / QTGet a quote ! ACCESS FREQ. MIN (GHz) FREQ. MAX (GHz) INTERFACE BITS RMS ATTENUATION / PHASE RANGE PACKAGE BOARD STATUS PROCESS
CGY2170YHV/C1
3 ports 8 12 CMOS, Serial 6 0.5 dB / 4° 31.5 dB / 360° QFN 7x7 Production ED02AH
CGY2170YUH/C1
3 ports 8 12 CMOS, Serial 6 0.4 dB / 3° 31.5 dB / 360° Die Production ED02AH
CGY2175AHV/C1
3 ports 4.5 6.5 CMOS, Serial 6 0.5 dB / 2° 31.5 dB / 360° QFN 7x7 Production ED02AH
CGY2175AUH/C1
3 ports 4.5 6.5 CMOS, Serial 6 0.2 dB / 1.3° 31.5 dB / 360° Die Production ED02AH
CGY2330UH/C1
2 Ports 12 15 Serial 6 0.5 dB / 11.25° 15 dB / 348.8° Die - Production ED02AH
CGY2350UH/C1
2 Ports 34 36 Serial 5 0.5 dB / 5° 15 dB / 348.8° Die Production ED02AH
CGY2351UH/C1
2 Ports 26.5 30.5 Serial 6 0.5 dB / 4° 22 dB / 360° Die - Production ED02AH

PERFORMANCE TABLE FOR RX CORECHIPS

PRODUCT DSDatasheet / QTGet a quote ! FUNCTION FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BITS PHASE ERROR RMS (°) PACKAGE BOARD STATUS PROCESS
CGY2179HV/C1
4 bits PS+LNA 10.7 12.75 12 2 3 4 7 QFN - Production ED02AH
CGY2179UH/C1
4 bit PS+LNA 10.7 12.75 12 2 3 4 7 Die - Production ED02AH

PERFORMANCE TABLE FOR TRUE TIME DELAY FUNCTION MMICs

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) BITS MIN DELAY (ps) FULL DELAY (ps) INSERTION LOSS (dB) CTRL INTERFACE (V) PACKAGE BOARD STATUS PROCESS
CGY2393SUH/C1
6 18 5 10 310 6 0 / +4 Die Production ED02AH
CGY2394SUH/C1
6 18 1 330 330 6 0 / +4 Die Production ED02AH

PERFORMANCE TABLE FOR DIGITAL PHASE-SHIFTER FUNCTIONS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) PHASE CONTROL (°) INSERTION LOSS (dB) IP1dB (dBm) BITS PHASE ERROR RMS (°) INTERFACE PACKAGE BOARD STATUS PROCESS
CGY2172XAUH/C1
8 12 360 8 18 6 2 0 / -3 V Die Production ED02AH
CGY2172XBUH/C1
8 12 360 8 18 6 3 0 / +5 V Die - Production ED02AH
CGY2173UH/C2
6 18 360 13 27 6 4 0 / -3 V Die Production ED02AH
CGY2174UH/C1
14 16 360 8 20 6 6 0 / -3 V Die - Production ED02AH
CGY2177AUH/C1
4.8 6.8 360 5 20 6 2 0 / +5 V Die - Production ED02AH
CGY2392SHV/C1
6 18 360 10.8 20 6 1.09 0 / +5 V QFN 5x5 - Production ED02AH
CGY2392SUH/C1
6 18 360 10.8 20 6 1.7 0 / +5 V Die Production ED02AH

PERFORMANCE TABLE FOR DIGITAL ATTENUATOR FUNCTIONS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) AMPLITUDE CONTROL (dB) INSERTION LOSS (dB) IP1dB (dBm) BITS RMS ATTEN. (dB) CTRL INTERFACE (V) PACKAGE BOARD STATUS PROCESS
CGY2169UH/C1
10 18 23.5 4 20 6 0.40 0 / -3 V Die - Production ED02AH
CGY2171XBUH/C1
1 15 31.5 5 20 6 0.25 0 / +3 V Die - Production ED02AH
CGY2176AUH/C1
1 8 31.5 5.6 - 6 0.20 0 / +5 V Die - Production ED02AH
CGY2390SUH/C1
6 18 35 2.2 - 3 0.20 0 / +5 V Die - Production ED02AH

WIDEBAND MIXERS

Wideband mixers are manufactured using OMMIC’s GaAs 180 nm E/D pHEMT (ED02AH) and 70 mm mHEMT (D007IH) technologies. They generally feature high isolation and can be used for application such as radar, telecommunication, instrumentation and GPS system.

PERFORMANCE TABLE FOR WIDEBAND MIXERS

PRODUCT DSDatasheet / QTGet a quote ! CONVERTER FREQ. MIN (GHz) FREQ. MAX (GHz) LO FREQUENCY (GHz) IF FREQUENCY (GHz) LO INPUT POWER (dBm) CONV. GAIN (dB) OP1dB (dBm) PACKAGE BOARD STATUS PROCESS
CGY2180UH/C1
Up & Down 0.7 3.7 0.7 - 4 DC - 2 12 -7 5 Die - Production ED02AH
CGY2181UH/C1
Up & Down 1 4.5 1-5 DC - 2 15 -7 6 Die - Production ED02AH
CGY2182UH/C1
Up & Down 3 10 3-10 DC - 3 15 -7 5 Die - Production ED02AH
CGY2183UH/C1
Active Down 0.1 6 0.1 - 6 DC - 3 -5 11 -5 Die - Production ED02AH
CGY2184UH/C1
Active Down 0.1 6 0.1 - 6 DC - 3 0 18 3 Die - Production ED02AH
CGY2460UH/C1
Down 40.5 43.5 8.8 - 10 5 - 6 9 33 0 Die - Production D007IH
CGY2470UH/C1
Up 92 96 86 - 90 5.1 - 6 7 -3 2 Die - Production D007IH
CGY2471UH/C1
Down 92 96 86 - 90 5.2 - 6 10 -10 5 Die - Production D007IH

MULTIPLIERS

Our MMIC portfolio includes Multipliers for radar or communication applications. Multipliers are manufactured using GaAs technology (D01MH), that is space qualified by the European Space Agency (ESA). For more information, please contact us.

PERFORMANCE TABLE FOR MULTIPLIERS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) MULTIPLICATION ISOLATION (dB) OUTPUT POWER (dBm) PACKAGE BOARD STATUS PROCESS
CGY2770UH/C2
11 11.5 x8 20 5 Die - Production D01MH

SWITCHES

Our switches portfolio includes discrete components from single-pole-single-throw (SPST) to single-pole-dual-throw (SPDT). These switch products showcase a great isolation, low losses and large power handling. They are designed using GaAs or GaN HEMT technologies.

PERFORMANCE TABLE FOR SWITCHES

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) ISOLATION (dB) INSERTION LOSS (dB) SWITCHING SPEED (ns) PACKAGE BOARD STATUS PROCESS
CGY2370UH/C1
92 96 35 2.2 10 Die - Production D01MH
CGY2890SUH/C1
6 18 > 50 1.5 - Die - Production ED02AH

TRANSIMPEDANCE AMPLIFIERS

The transimpedance amplifier MMIC is a voltage converter, almost exclusively implemented with one or more amplifiers.

PERFORMANCE TABLE FOR TRANSIMPEDANCE AMPLIFIER MMICs

PRODUCT DSDatasheet / QTGet a quote ! FUNCTION DATA RATE (Gb/s) DIFF GAIN (dBΩ) INPUT OVER-LOAD (mApp) ON CHIP AGC CURRENT (mA) POWER SUPPLY (V) PACKAGE BOARD STATUS PROCESS
CGY2102UH/C2
Differential Output TIA 2.5 76 2.5 Yes 45 +3.3 Die - Production ED02AH
CGY2110UH/C1/S2
Differential Output TIA 10 72 2.0 Yes 70 +5.0 Die - Production ED02AH
CGY2116UH/C1
Differential Output TIA 10.7 74 2.5 Yes 83 +5.0 Die - Production ED02AH
CGY2144UH/C2
TIA 43 49 3.5 No 100 +5.0 Die - Production D01PH

DIODES

OMMIC portfolio includes resonant interband tunnel diodes with great sensitivity. The diode can be used to detect small signals and are a great match to OMMIC’s LNAs.

PERFORMANCE TABLE FOR ZERO BIAS DIODE

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) SENSITIVITY (mV/uW) IRL (dB) BREAKDOWN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2870AUH/C1
80 110 9 -15 >2 Die - Sampling RITDM

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