ALL OUR PRODUCTS

CUTTING EDGE TECHNOLOGY AVAILABLE

OMMIC is supplying MMIC (Monolithic Microwave Integrated Circuit) based on III-V materials (GaN, GaAs and InP). The MMIC use gold bonding pads and backside metallization and are fully protected with Silicon Nitride passivation to get the highest level of reliability.

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POWER AMPLIFIERS

Our Power Amplifiers (PA) are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military applications. Some of our PA were manufactured using GaAs technology and some were designed in GaN for outstanding performances.

PERFORMANCE TABLE FOR POWER AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2134UH/C1
18 23 23 23 15 0.40 4.5 Die Production D01PH
CGY2135UH/C1
18 23 25 33 20.2 1.2 4 Die Production D01PH
CGY2540UH
0.5 20 22 35 - 12 Die Development D01GH
CGY2620UH/C1
8 11 25 41.2 28 3.25 9 Die Production D025PHS
CGY2631UH
6 18 20 41 35 2 12 Die Sampling D01GH
CGY2632UH
13 17 30 40 41 - 12 Die Development D01GH
CGY2650UH/C1
27 31 20 39 31 1.2 12 Die Production D01GH
CGY2651UH/C1
37 43 20 41 30 2.7 12 Die Production D01GH

T/R CHIP

OMMIC portfolio includes transceiver MMIC. The T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.

PERFORMANCE TABLE FOR T/R CHIPS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN Rx/Tx (dB) Tx POUT (dBm) Rx NF (dB) BIAS VOLTAGE (V) BIAS CURRENT (A) PACKAGE STATUS PROCESS
CGY2750UH
26 34 20/20 36 2.7 12 0.45 Die Sampling D01GH
CGY2760UH
37 40 16/27 35 3.5 12 1.3 Die Sampling D01GH

LOW NOISE AMPLIFIERS

Our Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies : mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.

PERFORMANCE TABLE FOR LOW NOISE AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2105XHV
0.5 4 19 0.42 35 100 5 QFN 4x4 Production D01PH
CGY2106XHV
0.1 3 19 0.45 35 100 5 QFN 4x4 Production D01PH
CGY2107HV
0.5 6 24 0.6 36 100 5 QFN 4x4 Production ED02AH
CGY2108GS
0.5 6 21 0.6 36 100 5 Flight Model Production ED02AH
CGY2108HV
0.5 6 22 0.5 36 100 5 QFN 4x4 Production D01PH
CGY2120XUH/C1
5 7 13 0.5 12 1 50 Die Production D007IH
CGY2121XUH/C2
18 26 19 1.5 5 60 0.8 Die Production D007IH
CGY2122XUH/C2
25 43 32 1.5 1 30 1.1 Die Production D007IH
CGY2124UH/C1
8 12 33 1.1 11 55 5 Die Production D01MH
CGY2125AUH/C1
13 15 25 1 8 20 3.3 Die Production D01MH
CGY2128UH/C2
24 34 24 1.3 11 47 3.5 Die Production D01PH
CGY2178UH/C1
5 6 30 1 15 40 3 Die Production ED02AH
CGY2190UH/C2
75 110 23 3 1 33 1 Die Production D007IH
CGY2220UH/C1
1 12 35 1.3 12 52 1.5 Die Production D007IH
CGY2221HV/C1
7.5 13 17 1.7 17 82 5 QFN 4x4 Sampling D01PH
CGY2221UH/C1
8 12 16 1.6 17 82 50 Die Production D01PH
CGY2222UH
8 12 20 1.5 20 160 8 Die Sampling D01GH
CGY2230UH/C1
1 18 35 1.5 12 50 1.5 Die Production D01GH
CGY2231UH
2 20 17 2.5 22 - 8 Die Development D01GH
CGY2232UH/C1
12 15 27 1.3 50 3 Die Production D01PH
CGY2250UH/C1
26 34 20 1.6 17 90 8 Die Production D01GH
CGY2260UH/C1
25 43 25 1.5 8 50 1.5 Die Production D007IH
CGY2272UH/C1
45 70 25 3 5 40 1.1 Die Developement D007IH
CGY2290SUH/C1
6 18 9 3.3 13 33 5 Die Production ED02AH

CORECHIPS

Corechips are based on the integration in a single die of digital phase shifter, digital attenuator, LNA, MPA and switches for phased array antenna applications. Phase and gain are controlled through a Serial to Parallel interface on the die (called SIPO).

PERFORMANCE TABLE FOR CORECHIPS (PS + ATT)

PRODUCT DSDatasheet / QTGet a quote ! ACCESS FREQ. MIN (GHz) FREQ. MAX (GHz) INTERFACE BITS LSB ATTENUATION / PHASE RANGE PACKAGE STATUS PROCESS
CGY2170XHV/C2
4 ports 8 12 CMOS, Serial 6 0.8 dB / 3° 31.5 dB / 360° QFN 6x6 Production ED02AH
CGY2170XUH/C2
4 ports 8 12 CMOS, Serial 6 0.3 dB / 3° 31.5 dB / 360° Die Production ED02AH
CGY2170YHV/C1
3 ports 8 12 CMOS, Serial 6 0.25 dB / 5° 31.5 dB / 360° QFN 7x7 Production ED02AH
CGY2170YUH/C1
3 ports 8 12 CMOS, Serial 6 0.3 dB / 1.8° 31.5 dB / 360° Die Production ED02AH
CGY2175AHV/C1
3 ports 4.5 6.5 CMOS, Serial 6 0.5 dB / 5.5° 31.5 dB / 360° QFN 7x7 Production ED02AH
CGY2175AUH/C1
3 ports 4.5 6.5 CMOS, Serial 6 0.2 dB / 1.3° 31.5 dB / 360° Die Production ED02AH
CGY2330UH/C1
2 Ports 12 15 SERIAL 6 0.5 dB / 11.25 ° 15 db / 348.8° Die Production ED02AH
CGY2350UH/C1
2 Ports 34 36 SERIAL 5 0.5 dB / 11.25 ° 15 db / 348.8 ° Die Production ED02AH
CGY2351UH/C1
2 Ports 26.5 30.5 SERIAL 6 0.5 dB / 4° 22 dB / 360° Die Production ED02AH

PERFORMANCE TABLE FOR RX CORECHIPS

PRODUCT DSDatasheet / QTGet a quote ! FUNCTION FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) BITS PHASE ERROR RMS PACKAGE STATUS PROCESS
CGY2179HV
4 bit PS+LNA 10.7 12.75 12 2 3 4 7 QFN Production ED02AH
CGY2179UH
4 bit PS+LNA 10.7 12.75 12 2 3 4 7 Die Production ED02AH

PERFORMANCE TABLE FOR DIGITAL PHASE-SHIFTER FUNCTIONS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) PHASE CONTROL (°) INSERTION LOSS (dB) P1dB INPUT (dBm) BITS PHASE ERROR RMS (°) INTERFACE PACKAGE STATUS PROCESS
CGY2172XAUH/C1
8 12 360 8 18 6 2 0 / -3 V Die Production ED02AH
CGY2172XBUH/C1
8 12 360 8 18 6 3 0 / +5 V Die Production ED02AH
CGY2173UH/C2
6 18 360 13 27 6 4 0 / -3 V Die Production ED02AH
CGY2174UH/C1
14 16 360 8 20 6 6 0 / -3 V Die Production ED02AH
CGY2177AUH/C1
4.8 6.8 360 5 20 6 2 0 / +5 V Die Production ED02AH
CGY2392SHV/C1
6 18 360 10.8 20 6 1.09 Parallel QFN 5x5 Production ED02AH
CGY2392SUH/C1
6 18 360 10.8 20 6 1.7 Parallel Die Production ED02AH

PERFORMANCE TABLE FOR DIGITAL ATTENUATORS FUNCTIONS

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) AMPLITUDE CONTROL (dB) INSERTION LOSS (dB) P1dB INPUT (dBm) BITS ATTEN. ERROR (dBm) CTRL INTERFACE (V) PACKAGE STATUS PROCESS
CGY2169UH/C1
10 18 23.5 4 20 6 0.40 0 / -3 V Die Production ED02AH
CGY2171XBUH/C1
1 15 31.5 5 20 6 0.25 0 / +3 V Die Production ED02AH
CGY2176AUH/C1
1 8 31.5 5.6 - 6 0.20 0 / +5 V Die Production ED02AH
CGY2390SUH/C1
6 18 35 2.2 - 6 0.20 0 / +5 V Die Production ED02AH

WIDEBAND AMPLIFIERS

Our Wideband Amplifiers are manufactured using OMMIC 130 nm gate length pHEMT technology D01PH or 100 nm HEMT technology D01GH. OMMIC wideband amplifiers are dedicated to application such as instrumentation, electronic warfare, 43 Gb/s OC-768 EAM Driver.

PERFORMANCE TABLE FOR WIDEBAND AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) BIAS CURRENT (A) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2141UH/C1
0.01 46 16 2 21 195 5 Die Production D01PH
CGY2144UH/C2
0.01 54 13 2.5 15 100 5 Die Production D01PH
CGY2145UH/C1
0.5 45 13 2.6 18 85 5 Die Production D01PH
CGY2160UH/C1
1.5 47 15 2.5 19 103 5 Die Production D01PH
CGY2550UH
0.6 40 16 - 17 91 18 Die Development D01GH

WIDEBAND MIXERS

Our Wideband Mixers are manufactured using OMMIC’s GaAs 180 nm E/D pHEMT (ED02AH) and 70 mm mHEMT (D007IH) technologies. They generally feature high isolation and can be used for application such as radar, telecommunication, instrumentation and GPS system.

PERFORMANCE TABLE FOR MIXERS

PRODUCT DSDatasheet / QTGet a quote ! CONVERTER FREQ. MIN (GHz) FREQ. MAX (GHz) LO FREQUENCY (GHz) IF INPUT POWER (dBm) LO INPUT POWER (dBm) CONV. GAIN (dB) P1dB OUT (dBm) PACKAGE STATUS PROCESS
CGY2180UH/C1
Up & Down 0.7 3.7 0.7 - 4 DC - 2 12 -7 5 Die Production ED02AH
CGY2181UH/C1
Up & Down 1 4.5 1-5 DC - 2 15 -7 6 Die Production ED02AH
CGY2182UH/C1
Up & Down 3 10 3-10 DC - 3 15 -7 5 Die Production ED02AH
CGY2183UH/C1
Active Down 0.1 6 0.1 - 6 DC - 3 -5 11 -5 Die Production ED02AH
CGY2184UH/C1
Active Down 0.1 6 0.1 - 6 DC - 3 0 18 3 Die Production ED02AH
CGY2460UH/C1
Down 40.5 43.5 8.8 - 10 5-6 9 33 0 Die Production D007IH
CGY2470UH/C1
Up 92 96 86 - 90 5.1 - 6 7 -3 2 Die Production D007IH
CGY2471UH/C1
Down 92 96 86 - 90 5.2 - 6 7 -10 5 Die Production D007IH

SWITCHES

Our switches portfolio includes discrete components from single-pole-single-throw (SPST) to single-pole-dual-throw (SPDT). These switch products showcase a great isolation, low losses and large power handling. They are designed using GaAs or GaN HEMT technologies.

PERFORMANCE TABLE FOR SWITCH

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) ISOLATION (dB) INSERTION LOSS (dB) SWITCHING SPEED (ns) PACKAGE STATUS PROCESS
CGY2370UH/C1
92 96 35 2.2 10 Die Production D01MH
CGY2890SUH/C1
6 18 > 50 1.5 - Die Production ED02AH

TRANSIMPEDANCE AMPLIFIERS

The transimpedance amplifier MMIC is a voltage converter, almost exclusively implemented with one or more amplifiers.

PERFORMANCE TABLE FOR TRANSIMPEDANCE AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FUNCTION DATA RATE (Gb/s) DIFF GAIN (dBΩ) INPUT OVER-LOAD (mApp) ON CHIP AGC CURRENT (mA) POWER SUPPLY (V) PACKAGE STATUS PROCESS
CGY2102UH/C2
Differential Output TIA 2.5 76 2.5 Yes 45 +3.3 Die Production ED02AH
CGY2110UH/C1/S2
Differential Output TIA 10 72 2.0 Yes 70 +5.0 Die Production ED02AH
CGY2112UH/C1
Differential Output TIA 10.7 72 2.5 Yes 70 +5.0 Die Production ED02AH
CGY2116UH/C1
Differential Output TIA 10.7 74 2.5 Yes 83 +5.0 Die Production ED02AH
CGY2144UH/C2
TIA 43 49 3.5 No 100 +5.0 Die Production D01PH

ZERO BIAS DETECTION DIODE

OMMIC portfolio includes resonant interband tunnel diodes with great sensitivity. The diode can be used to detect small signals and are a great match to OMMIC’s LNAs.

PERFORMANCE TABLE FOR ZERO BIAS DIODE

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) SENSITIVITY (mV/uW) IRL (dB) BREAKDOWN VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2870AUH/C1
80 110 9 -15 >2 Die Sampling RITDM

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