Based near Paris, OMMIC is composed of six main buildings of which 1500 m² are dedicated to clean rooms. These rooms are ISO 5 and ISO 3 certified and are entirely dedicated to the development and manufacturing of III-V integrated circuits. Every wafers that come out of clean rooms are delivered with electrical properties guaranteed by the measurement of specific test modules added on the mask set, named PCM (Process Control Monitor) and also followed with SPC (Statistical Process Control).
In order to best protect the wafers, our staff has undergone an in-depth training on contamination control. In addition, they enter and exit clean rooms through airlocks and must constantly be dressed with a protective suit, mask, gloves and overshoes to trap contaminants.
Few years ago, the company invested in a new pilot line primarily for millimetre wave 5G production. A new clean room of 800 m² which now provides OMMIC with a production capacity of 2 million chips per year and makes this company a major player in the deployment of 5G.
Technicians and operators are made up of two teams who take turns to optimise the manufacturing process and thus have a continuous production. The fabrication line, test center, reliability center and modeling team are on the same site. This proximity allows us to obtain the best performances from all the OMMIC processes, while maintaining yield and reliability.
At OMMIC, we have 4 epitaxy reactors that allow our R&D department to develop our own epi structure.
We supplie epi-wafers in 3-, 4- and 6-inch formats using production MOCVD and serves high performance low cost pHEMT, mHEMT & HBT epitaxial wafer.
We use E-Beam lithography to define gates as small as 40 nm.
OMMIC consists of 6 main buildings with 1500 m² of clean rooms (3-inch and 6-inch Fab line) which are fully devoted to III-V IC development and fabrication.
Our experience in microwaves, leads us to design complex RF & DC tests procedures allowing testing 100% of our MMIC products in order to guarantee the delivery of know good dies.