III – V PROCESSES

WHY INNOVATING WITH III-V’S ?

Since the late sixties, what was to become OMMIC started research in semiconductors. If most of today’s electronics is composed of Silicon (Si) devices, the enhanced performances of compound semiconductors quickly became a matter of course for us.

 

By creating an alloy of the elements of colums III (B, Al, Ga, In) and V (N, P, As Sb) of the periodic table of the elements, one obtains what is called a III-V compound. Theses semiconductors (such as InP, GaAs and GaN) find wide applications in high-performance radiofrequencies and optoelectronic devices owing to their superior electronic properties including high electron mobility, high saturated velocity and direct (large) band gap.

 

Our portfolio -focused on millimetre wave (mmW) and Terahertz- includes GaAs pHEMT and mHEMT, InP HBT and GaN.

III-V PERIODIC TABLE OF THE ELEMENTS

OUR PROCESSES

Having more than 40 years of experience in process development, OMMIC built a wide portfolio of processes using III-V materials. Dedicated to innovation, OMMIC focuses on new technologies with high potential to deliver the best possible performances. Today, OMMIC is the only foundry offering mHEMT processes (D01MH, D007IH, D004IH) in production as much as GaN/Si for RF purposes (D01GH, D006GH).

 

Our processes are built for high reliability and long life-time as requested by space customers. All our processes are designed, keeping the European Space Agency (ESA) guidelines in mind, with the goal to be space qualified. Today, all our millimetre wave processes are either qualified or being screened.

FREQUENCY OF MAIN APPLICATIONS (GHz)

0
25
50
75
100
125
150
175
200
225
250
margin-left = frq_Min / 2.75 ET width= (frq_Max - frq_Min) / 2.75

D01GH

On going space qualification


Well suited for application from 15 to 50 GHz

HPA
ROBUST LNA
T/R CHIP

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D006GH


Well suited for application from 50 to 100 GHz

HPA
ROBUST LNA
SWITCH

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D004IH

On development


Well suited for application from 60 to 250 GHz

LNA
MIXER

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D007IH

Space qualified


Well suited for application from 20 to 150 GHz

LNA
MIXER

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D01MH

Space qualified


Well suited for application from 20 to 75 GHz

LNA
MIXER

 

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D01PH(S)

Space qualified


Well suited for application from 5 to 45 GHz

PA
LNA
MIXER
TWA

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ED02AH

Space qualified


Well suited for application from 1 to 40 GHz

LNA
CONTROL FUNCTION
CORECHIPS
MIXER

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Most of our processes are space qualified and under the European Prefered Part List (EPPL). Use our very reliable process for any application. Find more information about our processes in the table below.

PROCESS gm (mS/mm) POWER DENSITY (mW/mm) NOISE FIGURE (dB) MIM CAPACITORS (pF/mm²) Idss MAX (mA/mm) Idss (mA/mm) Vbgd (V) F MAX (GHz) Ft (GHz) GATE WRITE THIKNESS (µm) GATE LENGTH (nm) SPACE GRADE STATUS TECHNOLOGY
D01GH 800 3300 1.5 @
40GHz
50 & 400 1700 1200 36 160 110 eBeam 100 100 In 2020 Market Introduction GaN on Si
D006GH 900 3300 1 @
40GHz
50 & 400 1700 1200 36 190 150 eBeam 100 60 - Market Introduction GaN on Si
D004IH 2000 NA 0.4 @
30GHz
50 & 400 400 200 4 600 400 eBeam 100 40 - Development GaAs m-Hemt
D007IH 1600 NA 0.5 @
30GHz
50 & 400 400 200 4 450 300 eBeam 70 || 100 70 In 2020 Production GaAs m-Hemt
D01MH 700 300 0.8 @
30GHz
50 & 400 500 300 8 250 150 eBeam 70 || 100 130 Yes Production GaAs m-Hemt
D01PH(S) 650 640 1.1 @
GHz
50 & 400 700 500 12 180 100 eBeam 70 || 100 130 Yes Production GaAs p-Hemt
ED02AH 450 330 0.8 @
18GHz
50 & 400 400(on)
180(off)
250(on)
140(off)
8 110 60 eBeam 100 180 Yes Production GaAs p-Hemt

OUR PROCESSES CAN BE USED THROUGH :

FOUNDRY SERVICES

OMMIC provides its Process Design Kit (PDK) under ADS (Keysight) or Microwave Office (AWR) for customers to design their own product.

OUR PROCESSES CAN BE USED THROUGH :

CUSTOM DESIGN

OMMIC provides custom design MMIC services based on customer’s specifications, from DC to W-band.

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