III – V PROCESSES

WHY INNOVATING WITH III-V’S ?

Since the late sixties, what was to become OMMIC started research in semiconductors. If most of today’s electronics is composed of Silicon (Si) devices, the enhanced performances of compound semiconductors quickly became a matter of course for us.

 

By creating an alloy of the elements of colums III (B, Al, Ga, In) and V (N, P, As Sb) of the periodic table of the elements, one obtains what is called a III-V compound. Theses semiconductors (such as InP, GaAs and GaN) find wide applications in high-performance radiofrequencies and optoelectronic devices owing to their superior electronic properties including high electron mobility, high saturated velocity and direct (large) band gap.

 

Our portfolio -focused on millimetre wave (mmW) and Terahertz- includes GaAs pHEMT and mHEMT, InP HBT and GaN.

III-V PERIODIC TABLE OF THE ELEMENTS

OUR PROCESSES

Having more than 40 years of experience in process development, OMMIC built a wide portfolio of processes using III-V materials. Dedicated to innovation, OMMIC focuses on new technologies with high potential to deliver the best possible performances. Today, OMMIC is the only foundry offering mHEMT processes (D01MH, D007IH, D004IH) in production as much as GaN/Si for RF purposes (D01GH, D006GH).

 

Our processes are built for high reliability and long life-time as requested by space customers. All our processes are designed, keeping the European Space Agency (ESA) guidelines in mind, with the goal to be space qualified. Today, all our millimetre wave processes are either qualified or being screened.

FREQUENCY OF MAIN APPLICATIONS (GHz)

0
25
50
75
100
125
150
175
200
225
250
margin-left = frq_Min / 2.75 ET width= (frq_Max - frq_Min) / 2.75

D01GH

On going space qualification


Well suited for application from 15 to 50 GHz

HPA
ROBUST LNA
T/R CHIP

Click picto

D006GH


Well suited for application from 50 to 100 GHz

HPA
ROBUST LNA
SWITCH

Click picto

D004IH

On development


Well suited for application from 60 to 250 GHz

LNA
MIXER

Click picto

D007IH

Space qualified


Well suited for application from 20 to 150 GHz

LNA
MIXER

Click picto

D01MH

Space qualified


Well suited for application from 20 to 75 GHz

LNA
MIXER

 

Click picto

D01PH(S)

Space qualified


Well suited for application from 5 to 45 GHz

PA
LNA
MIXER
TWA

Click picto

ED02AH

Space qualified


Well suited for application from 1 to 40 GHz

LNA
CONTROL FUNCTION
CORECHIPS
MIXER

Click picto

Most of our processes are space qualified and under the European Prefered Part List (EPPL). Use our very reliable process for any application. Find more information about our processes in the table below.

PROCESS TECHNOLOGY STATUS SPACE GRADE GATE LENGTH (nm) THICKNESS (µm) GATE WRITE Ft(GHz) Fmax(GHz) Vbgd (V) Vds.q (V) Idss (mA/mm) Idss MAX (mA/mm) TRANSCONDUCTION (mS/mm) MIM CAPACITORS (pF/mm²) NOISE FIGURE (dB) POWER DENSITY (mW/mm)
D01GH GaN/Si Market Introduction In process 100 100 eBeam 110 180 36 12 1200 1700 800 50 & 400 1.5 @
40 GHz
4000
D006GH GaN/Si Market Introduction - 60 100 eBeam 150 190 36 12 1200 1700 900 50 & 400 1 @
40 GHz
3300
D004IH GaAs mHEMT Development - 40 70 ll 100 eBeam 400 600 4 3 200 400 2000 50 & 400 0.4 @
30 GHz
NA
D007IH GaAs mHEMT Production In 2020 70 70 || 100 eBeam 300 450 4 3 200 400 1600 50 & 400 0.5 @
30 GHz
NA
D01MH GaAs mHEMT Production Yes 125 70 || 100 eBeam 150 250 8 6 300 500 700 50 & 400 0.8 @
30 GHz
300
D01PH(S) GaAs pHEMT Production Yes 135 70 || 100 eBeam 100 180 12 10 500 700 650 50 & 400 1.1 @
30 GHz
640
ED02AH GaAs pHEMT Production Yes 180 100 eBeam 60 110 8 7 250(on)
140(off)
400(on)
180(off)
450 50 & 400 0.8 @
18 GHz
330

OUR PROCESSES CAN BE USED THROUGH :

FOUNDRY SERVICES

OMMIC provides its Process Design Kit (PDK) under ADS (Keysight) or Microwave Office (AWR) for customers to design their own product.

OUR PROCESSES CAN BE USED THROUGH :

CUSTOM DESIGN

OMMIC provides custom design MMIC services based on customer’s specifications, from DC to W-band.

GET A QUOTE