Since the late sixties, what was to become OMMIC started research in semiconductors. If most of today’s electronics is composed of Silicon (Si) devices, the enhanced performances of compound semiconductors quickly became a matter of course for us.
By creating an alloy of the elements of colums III (B, Al, Ga, In) and V (N, P, As Sb) of the periodic table of the elements, one obtains what is called a III-V compound. Theses semiconductors (such as InP, GaAs and GaN) find wide applications in high-performance radiofrequencies and optoelectronic devices owing to their superior electronic properties including high electron mobility, high saturated velocity and direct (large) band gap.
Our portfolio -focused on millimetre wave (mmW) and Terahertz- includes GaAs pHEMT and mHEMT, InP HBT and GaN.
Having more than 40 years of experience in process development, OMMIC built a wide portfolio of processes using III-V materials. Dedicated to innovation, OMMIC focuses on new technologies with high potential to deliver the best possible performances. Today, OMMIC is the only foundry offering mHEMT processes (D01MH, D007IH, D004IH) in production as much as GaN/Si for RF purposes (D01GH, D006GH).
Our processes are built for high reliability and long life-time as requested by space customers. All our processes are designed, keeping the European Space Agency (ESA) guidelines in mind, with the goal to be space qualified. Today, all our millimetre wave processes are either qualified or being screened.
FREQUENCY OF MAIN APPLICATIONS (GHz)
Process in Development
Space Qualified Process
Space Qualified Process
–
Well suited for application from 15 to 50 GHz
–
HPA
ROBUST LNA
T/R CHIP
–
Well suited for application from 50 to 100 GHz
–
HPA
ROBUST LNA
SWITCH
–
Well suited for application from 60 to 250 GHz
–
LNA
MIXER
–
Well suited for application from 20 to 150 GHz
–
LNA
MIXER
–
Well suited for application from 20 to 75 GHz
–
LNA
MIXER
–
Well suited for application from 5 to 45 GHz
–
PA
LNA
MIXER
TWA
–
Well suited for application from 1 to 40 GHz
–
LNA
CONTROL FUNCTION
CORECHIPS
MIXER
Most of our processes are space qualified and under the European Prefered Part List (EPPL). Use our very reliable process for any application. Find more information about our processes in the table below.
| PROCESS | gm (mS/mm) | POWER DENSITY (mW/mm) | NOISE FIGURE (dB) | MIM CAPACITORS (pF/mm²) | Idss MAX (mA/mm) | Idss (mA/mm) | Vbgd (V) | F MAX (GHz) | Ft (GHz) | GATE WRITE | THIKNESS (µm) | GATE LENGTH (nm) | SPACE GRADE | STATUS | TECHNOLOGY |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D01GH | 800 | 3300 | 1.5 @ 40GHz |
50 & 400 | 1700 | 1200 | 36 | 160 | 110 | eBeam | 100 | 100 | In 2020 | Market Introduction | GaN on Si |
| D006GH | 900 | 3300 | 1 @ 40GHz |
50 & 400 | 1700 | 1200 | 36 | 190 | 150 | eBeam | 100 | 60 | - | Market Introduction | GaN on Si |
| D004IH | 2000 | NA | 0.4 @ 30GHz |
50 & 400 | 400 | 200 | 4 | 600 | 400 | eBeam | 100 | 40 | - | Development | GaAs m-Hemt |
| D007IH | 1600 | NA | 0.5 @ 30GHz |
50 & 400 | 400 | 200 | 4 | 450 | 300 | eBeam | 70 || 100 | 70 | In 2020 | Production | GaAs m-Hemt |
| D01MH | 700 | 300 | 0.8 @ 30GHz |
50 & 400 | 500 | 300 | 8 | 250 | 150 | eBeam | 70 || 100 | 130 | Yes | Production | GaAs m-Hemt |
| D01PH(S) | 650 | 640 | 1.1 @ GHz |
50 & 400 | 700 | 500 | 12 | 180 | 100 | eBeam | 70 || 100 | 130 | Yes | Production | GaAs p-Hemt |
| ED02AH | 450 | 330 | 0.8 @ 18GHz |
50 & 400 | 400(on) 180(off) |
250(on) 140(off) |
8 | 110 | 60 | eBeam | 100 | 180 | Yes | Production | GaAs p-Hemt |
OMMIC provides its Process Design Kit (PDK) under ADS (Keysight) or Microwave Office (AWR) for customers to design their own product.
OMMIC provides custom design MMIC services based on customer’s specifications, from DC to W-band.
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