OMMIC’s GaN has been engineered to reduce as much as possible traps in its process. The surface condition of GaN is being strictly monitored which is why, unlike most processes in production, OMMIC’s D01GH has few-to-no measurable memory effect. With D01GH, optimized digital predistortion technique can be used as much as complex modulation.
GaN products are being actively developped for emerging applications : they are processed using D01GH GaN/Si technology which is 100% european.
Our state of the art GaN/Si technology can cover most of the applications of conventional pHEMT including low noise, with more output power and much better robustness to input power stress.
Take advantage of the high-power density of our GaN processes (D01GH & D006GH). OMMIC’s GaN technology features high output power (up to W-band), but also high linearity, low noise and no noticeable memory effect. We have realeased our first GaN process in 2015.
For more information, please contact us.
Our Power Amplifiers are designed in GaN for outstanding performances and are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military.
Reduce your energy footprint by choosing OMMIC’s GaN process. Due to its high PAE, you will reduce the energy consumption.
|PRODUCT||DSDatasheet / QTGet a quote !||FREQ. MIN (GHz)||FREQ. MAX (GHz)||GAIN (dB)||Psat (dBm)||PAE (%)||BIAS CURRENT (A)||DRAIN VOLTAGE (V)||PACKAGE||STATUS||PROCESS|
|Get a Quote !||0.5||20||22||35||-||12||Die||Development||D01GH|
|Get a Quote !||6||18||20||41||35||2||12||Die||Sampling||D01GH|
|Get a Quote !||13||17||30||40||41||-||12||Die||Development||D01GH|
|Get a Quote !||29.5||33.5||20||40||31||1.2||12||Die||Production||D01GH|
|Datasheet Get a Quote !||37||43||22||41||35||2.7||12||Die||Production||D01GH|
OMMIC portfolio includes transceiver MMIC. The T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.
|PRODUCT||DSDatasheet / QTGet a quote !||FREQ. MIN (GHz)||FREQ. MAX (GHz)||GAIN Rx/Tx (dB)||Tx POUT (dBm)||Rx NF (dB)||BIAS VOLTAGE (V)||BIAS CURRENT (A)||PACKAGE||STATUS||PROCESS|
|Datasheet Get a Quote !||26||34||20/20||36||2.7||12||0.45||Die||Sampling||D01GH|
|Get a Quote !||37||40||16/27||35||3.5||12||1.3||Die||Demonstrator||D01GH|
Our Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies : mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.
|PRODUCT||DSDatasheet / QTGet a quote !||FREQ. MIN (GHz)||FREQ. MAX (GHz)||GAIN (dB)||NOISE FIGURE (dB)||OP1dB (dBm)||BIAS CURRENT (mA)||BIAS VOLTAGE (V)||PACKAGE||STATUS||PROCESS|
|Datasheet Get a Quote !||8||12||20||1.5||20||160||8||Die||Sampling||D01GH|
|Get a Quote !||2||20||17||2.5||22||-||8||Die||Development||D01GH|
|Get a Quote !||26||34||20||1.6||17||90||8||Die||Production||D01GH|