INNOVATIVE GaN PRODUCTS

GaN THE THIRD REVOLUTION IN III – V COMPOUNDS

OMMIC’s GaN has been engineered to reduce as much as possible traps in its process. The surface condition of GaN is being strictly monitored which is why, unlike most processes in production, OMMIC’s D01GH has few-to-no measurable memory effect. With D01GH, optimized digital predistortion technique can be used as much as complex modulation.

GaN products are being actively developped for emerging applications : they are processed using D01GH GaN/Si technology which is 100% european.

Our state of the art GaN/Si technology can cover most of the applications of conventional pHEMT including low noise, with more output power and much better robustness to input power stress.

Take advantage of the high-power density of our GaN processes (D01GH & D006GH). OMMIC’s GaN technology features high output power (up to W-band), but also high linearity, low noise and no noticeable memory effect. We have realeased our first GaN process in 2015.

 

For more information, please contact us.

BE GREEN

Reduce your energy footprint by choosing OMMIC’s GaN process. Due to its high PAE, you will reduce the energy consumption.

GaN POWER AMPLIFIERS

Our Power Amplifiers (PA) are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military applications. Some of our PAs were designed in GaN for outstanding performances.

PERFORMANCE TABLE FOR GaN POWER AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2540UH
0.5 20 22 35 - 12 Die Development D01GH
CGY2631UH
6 18 20 41 35 2 12 Die Sampling D01GH
CGY2632UH
13 17 30 40 41 - 12 Die Development D01GH
CGY2650UH/C1
27 31 20 39 31 1.2 12 Die Production D01GH
CGY2651UH/C1
37 43 20 41 30 2.7 12 Die Production D01GH

GaN T/R CHIP

OMMIC portfolio includes transceiver MMIC. The T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.

PERFORMANCE TABLE FOR GaN T/R CHIP

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN Rx/Tx (dB) Tx POUT (dBm) Rx NF (dB) BIAS VOLTAGE (V) BIAS CURRENT (A) PACKAGE STATUS PROCESS
CGY2750UH
26 34 20/20 36 2.7 12 0.45 Die Sampling D01GH
CGY2760UH
37 40 16/27 35 3.5 12 1.3 Die Sampling D01GH

GaN LOW NOISE AMPLIFIERS

Our Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies : mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.

PERFORMANCE TABLE FOR GaN LOW NOISE AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2222UH
8 12 20 1.5 20 160 8 Die Sampling D01GH
CGY2230UH/C1
1 18 35 1.5 12 50 1.5 Die Production D01GH
CGY2231UH
2 20 17 2.5 22 - 8 Die Development D01GH
CGY2250UH/C1
26 34 20 1.6 17 90 8 Die Production D01GH

GaN WIDEBAND AMPLIFIERS

Our Wideband Amplifiers are manufactured using OMMIC 130 nm gate length pHEMT technology D01PH or 100 nm HEMT technology D01GH. OMMIC wideband amplifiers are dedicated to application such as instrumentation, electronic warfare, 43 Gb/s OC-768 EAM Driver.

PERFORMANCE TABLE FOR GaN WIDEBAND AMPLIFIERS MMIC

PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) P1dB OUT (dBm) BIAS CURRENT (A) BIAS VOLTAGE (V) PACKAGE STATUS PROCESS
CGY2550UH
0.6 40 16 - 17 91 18 Die Development D01GH

CAN’T FIND THE PRODUCT YOU NEED ?

You’re searching for a product with exotic specification but you can’t find the product on the market ? Don’t worry ! Check-out our other options.