GaN PRODUCTS

THE THIRD REVOLUTION IN III-V COMPOUNDS

OMMIC’s GaN has been engineered to reduce as much as possible traps in its process. The surface condition of GaN is being strictly monitored which is why, unlike most processes in production, OMMIC’s D01GH has few-to-no measurable memory effect. With D01GH, optimized digital predistortion technique can be used as much as complex modulation.

GaN products are being actively developped for emerging applications : they are processed using D01GH GaN/Si technology which is 100% european.

Our state of the art GaN/Si technology can cover most of the applications of conventional pHEMT including low noise, with more output power and much better robustness to input power stress.

Take advantage of the high-power density of our GaN processes (D01GH & D006GH). OMMIC’s GaN technology features high output power (up to W-band), but also high linearity, low noise and no noticeable memory effect. We have realeased our first GaN process in 2015.

 

For more information, please contact us.

GaN POWER AMPLIFIERS

Our Power Amplifiers are designed in GaN for outstanding performances and are dedicated to application such as telecommunication, instrumentation, radars but also for satcom and military.
Reduce your energy footprint by choosing OMMIC’s GaN process. Due to its high PAE, you will reduce the energy consumption.

PERFORMANCE TABLE FOR GaN POWER AMPLIFIER MMICs

PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) DRAIN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2631UH
6 18 20 40 36 2 12 Die Sampling D01GH
CGY2632AUH
14.5 18 29 43 35 12 Die - contact OMMIC D01GH
CGY2632BUH
14 18 28 46 35 12 Die - contact OMMIC D01GH
CGY2650UH/C1
29.5 33 22 39 31 1.2 12 Die Production D01GH
CGY2651UH/C1
37 43 18 40 35 2.7 12 Die Production D01GH
CGY2654UH
32 38 20 40 25 0.69 12 Die - Sampling D01GH
DEV2641UH
2 20 20 40 40 Die Sampling D01GH
DEV2642UH
17 21 25 40 42 2.5 9 Die - Development D01GH

GaN T/R CHIPS

OMMIC portfolio includes transceiver MMIC. The T/R chips are composed of a power amplifier, a low noise amplifier and switches to route the signal. GaN T/R chips feature high output power, outstanding efficiency as well as great robustness.

PERFORMANCE TABLE FOR GaN T/R CHIP MMICs

PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN Rx/Tx (dB) Tx POUT (dBm) Rx NF (dB) BIAS VOLTAGE (V) BIAS CURRENT (A) PACKAGE BOARD STATUS PROCESS
CGY2750UH
26 30 20/20 36 2.7 12 0.45 Die Sampling D01GH
CGY2760UH
37 40 16/27 35 3.5 12 1.3 Die Demonstrator D01GH

GaN LOW NOISE AMPLIFIERS

Our Low Noise Amplifiers are manufactured using space qualified technologies (ED02AH, D01PH, D01MH) or innovative technologies: mHEMT for lower noise & higher frequencies or GaN HEMT for robust LNAs.

PERFORMANCE TABLE FOR GaN LOW NOISE AMPLIFIER MMICs

PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2222UH
8 12 20 1.5 20 160 8 Die Sampling D01GH
CGY2250UH
26 34 20 1.6 17 90 8 Die Sampling D01GH
PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS

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