CGY2170YHV/C1

8 - 12 GHz 3 PORTS CORECHIP

DESCRIPTION

The CGY2170YHV/C1 is a high performance GaAs MMIC T/R 6-bits Corechip operating in X-band. It exhibits 3 RF ports including 3 switches. It includes a 6-bit phase shifter, a 6-bit attenuator and switches. It has a phase shifting range of 360° and a gain setting range of 31.5 dB. It covers the frequency range from 8 to 12 GHz and provide 5.8 dB of gain at 10 GHz. It can be used in radar, telecommunication and instrumentation applications. The on-chip control logic with serial input register minimises the number of bonding pads and greatly simplifies the interfacing to this device.

The die is manufactured using ED02AH OMMIC’s 180 nm gate length pHEMT technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability. This technology has been evaluated for space applications and is on the European Preferred Parts List of the European Space Agency (ESA).

<
PAUSE
>

Product size: 7 x 7 x 0.9 mm³

PRODUCT DSDatasheet / QTGet a quote ! ACCESS FREQ. MIN (GHz) FREQ. MAX (GHz) INTERFACE BITS RMS ATTENUATION / PHASE RANGE PACKAGE BOARD STATUS PROCESS
CGY2170YHV/C1
3 ports 8 12 CMOS, Serial 6 0.5 dB / 4° 31.5 dB / 360° QFN 7x7 Production ED02AH

FEATURES

  • Gain Tx/Rx: 5.8 dB at 10 GHz
  • RMS Phase Error ≈ 4.0° at 9-10 GHz
  • RMS Amplitude Error ≈ 0.5 dB at 8-11 GHz
  • Output P1dB Tx ≈ +12 dBm
  • Output P1dB Rx ≈ +12 dBm
  • S11& S22<-12dB @ 10 GHz (all states)
  • Total Power Consumption ≈ 0,36 W

APPLICATIONS

  • AESA Radar
  • Telecommunication

CAN’T FIND THE PERFORMANCE YOU NEED?

Check out the performance of our other corechips.