CGY2190UH/C2

75–110 GHz LOW NOISE AMPLIFIER

The CGY2190UH/C2 is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the W-band. The die is manufactured using OMMIC’s Advanced 70 nm gate length high Indium content mHEMT technology (D007IH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

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PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2190UH/C2
75 110 23 2.8 1 33 1 Die - Production D007IH
PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS

FEATURES

  • Power Consumption: VD = 1 V
  • Power Consumption: VG = 0 V
  • Power Consumption: IDD = 33 mA
  • 50 Ohms Input and Output Matched
  • DC & RF Tested, Inspected Known Good Die
  • Samples Available
  • Space and MIL-STD Available
  • Product size: 2 x 3 mm²

APPLICATIONS

  • Millimetre Wave Imaging
  • Earth Observation
  • E-band communications
  • Radar
  • General purpose amplifier

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LNA

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EXOTIC SPECS?

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