CGY2220UH/C1

1 – 12 GHz LOW NOISE AMPLIFIER

DESCRIPTION

The CGY2220UH/C1 is a high performance GaAs Wide Band Low Noise amplifier designed to operate from 1 to 12 GHz with an exceptionally low noise figure of 1.5 dB and very high gain of 36 dB. The device is a 3 stages Low Noise amplifier with low power consumption, the drain voltage is typically 1.5 V and total current consumption 52 mA. The device can be used in radio and radar systems, telecommunication and instrumentation applications.

This die is manufactured using D007IH OMMIC high performance 70 nm gate length high Indium content mHEMT low noise technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

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PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2220UH/C1
1 12 35 1.3 12 52 1.5 Die - Production D007IH
PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS

FEATURES

  • 50 Ohms input and output matched
  • Input Return Loss : 12 dB at 10 GHz
  • Output Return Loss : 10 dB at 10 GHz
  • Delivered as 100% on-wafer RF tested dies
  • Samples and evaluation Boards Available
  • Tested, Inspected Known Good Die (KGD)
  • Samples available
  • Demonstration Boards

APPLICATIONS

  • Radio systems
  • Telecommunications
  • Instrumentation

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