CGY2250UH

26-34 GHz GaN LOW NOISE AMPLIFIER

The CGY2250UH is a high-performance GaN Low Noise Amplifier MMIC designed to operate in the Ka-Band. The die is manufactured using OMMIC's high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with SIlicon Nitride passivation to obtain the highest level of reliability.

PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2250UH
26 34 20 1.6 17 90 8 Die Sampling D01GH
PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) NOISE FIGURE (dB) OP1dB (dBm) BIAS CURRENT (mA) BIAS VOLTAGE (V) PACKAGE BOARD STATUS PROCESS

FEATURES

  • Pin Max > 30 dBm (pulsed)
  • Power Consumption: VD = 8.5 V
  • Power Consumption: VS = -3 V
  • Power Consumption: IQTOT = 90 mA
  • 50 Ohms Input and Output Matched
  • Product size: 1.26 x 3.65 mm²

APPLICATIONS

  • Radar
  • Telecommunication
  • SATCOM

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LNA

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