The CGY2631UH is a high-performance GaN/Si Power Amplifier MMIC designed to operate in the Ku-Band. The die is manufactured using OMMIC’s high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. The device is a must have for your defense project. Dedicated to radar and military applications, it can also be used for telecommunication. Moreover, this technology is being evaluated for space applications.
| PRODUCT | DSDatasheet / S2PS2P Files / QTGet a quote | FREQ. MIN (GHz) | FREQ. MAX (GHz) | GAIN (dB) | Psat (dBm) | PAE (%) | BIAS CURRENT (A) | DRAIN VOLTAGE (V) | PACKAGE | BOARD | STATUS | PROCESS |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CGY2631UH
CGY2631UH
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Get a Quote
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6 | 18 | 20 | 40 | 36 | 2 | 12 | Die |  |
Sampling | D01GH |
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