The CGY2650UH/C1 is a high performance GaN power amplifier MMIC designed to operate in the Ka-Band. This Power Amplifier (PA) has an output power of 8 W at the 1dB compression point and has a small signal gain of 20 dB. It can be used in radar, telecommunication and instrumentation applications.
The die is manufactured using D01GH OMMIC’s high performance 100 nm gate length GaN on Si pHEMT power technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. Thank’s to the GaN on Si Advanced power process, 12 V Drain voltage can be used.