CGY2650UH/C1

29.5 – 33.5 GHz 40 dBm GaN POWER AMPLIFIER

DESCRIPTION

The CGY2650UH/C1 is a high performance GaN power amplifier MMIC designed to operate in the Ka-Band. This Power Amplifier (PA) has an output power of 8 W at the 1dB compression point and has a small signal gain of 20 dB. It can be used in radar, telecommunication and instrumentation applications.

The die is manufactured using D01GH OMMIC’s high performance 100 nm gate length GaN on Si pHEMT power technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. Thank’s to the GaN on Si Advanced power process, 12 V Drain voltage can be used.

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Product size: 3.2 x 3.5 mm²
PRODUCT DSDatasheet / QTGet a quote ! FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) DRAIN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2650UH/C1
29.5 33.5 20 40 31 1.2 12 Die Production D01GH

FEATURES

  • On chip 50 Ω Input and Output Matching
  • Input Return Loss : 10 dB
  • Output Return Loss : 10 dB
  • Power Supply : 2.9 A at 12 V
  • Tested, Inspected Known Good Die (KGD)
  • Demonstration Boards
  • Space and MILL-STD MMICs

APPLICATIONS

  • Radar
  • Telecommunication
  • Instrumentation

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