CGY2651UH/C1

37-43 GHz 41 dBm GaN POWER AMPLIFIER

The CGY2651UH/C1 is a high-performance GaN power amplifier MMIC designed to operate in the V-Band. The die is manufactured using OMMIC’s high-performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

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PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) DRAIN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2651UH/C1
37 43 18 40 35 2.7 12 Die Production D01GH

FEATURES

  • Input Return Loss: 8 dB
  • Output Return Loss: 10 dB
  • Power Consumption: 0.84 A @ 12 V (quiescent)
  • Power Consumption: 3.9 A @ 12 V (large signal)
  • 50 Ohms Input and Output Matched
  • Tested, Inspecgted Known Good Die (KGD)
  • Product size: 3.6 x 2.8 mm²

APPLICATIONS

  • Radar
  • Telecommunication
  • Spatial

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