CGY2654UH

32-38 GHz POWER AMPLIFIER

The CGY2654UH is a high-performance GaN Power Amplifier designed to operate in the Ka-Band.

The die is manufactured using OMMIC’s high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN (dB) Psat (dBm) PAE (%) BIAS CURRENT (A) DRAIN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2654UH
32 38 20 40 25 0.69 12 Die - Sampling D01GH

FEATURES

  • Drain Voltage Supply: VD = 12 V
  • Drain Current Typical: IDQ = 690 mA
  • 50 Ohms Input and Output Matched
  • Product size: 5.85 x 1.5 mm²

APPLICATIONS

  • Radar
  • Telecommunications
  • Instrumentation

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