CGY2750UH

26-30 GHz 2 W GaN T/R CHIP

The CGY2750UH/C1 is a high performance GaN T/R Chip MMIC designed to operate in the Ka-band. The device is composed of one high-performance Power Amplifier (PA), one Low Noise Amplifier (LNA) with a very good noise figure and a switch.

The die is manufactured using OMMIC’s high-performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

<
PAUSE
>
PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) GAIN Rx/Tx (dB) Tx POUT (dBm) Rx NF (dB) BIAS VOLTAGE (V) BIAS CURRENT (A) PACKAGE BOARD STATUS PROCESS
CGY2750UH
26 30 20/20 36 2.7 12 0.45 Die Sampling D01GH

FEATURES

  • 50 Ohms Input and Output Matched
  • Tested, Inspected Known Good Dies (KGD)
  • Product size: 3.65 x 3 mm²

APPLICATIONS

  • Radar
  • SATCOM
  • Telecommunication
  • Instrumentation

GET A QUOTE

Interested in the product? Send us your detailed request and we will get back to you promptly.

T/R CHIPS

Cannot find the performance you need? Check out the performances of our other T/R Chips!

EXOTIC SPECS?

Looking for a product with exotic specifications and you cannot find it on the market? We have the solution.

ANY QUESTIONS?

Need further information about this MMIC? Feel free to contact our support team whenever you need.