The CGY2750UH/C1 is a high performance GaN T/R Chip MMIC designed to operate in the Ka-band. The device is composed of one high-performance Power Amplifier (PA), one Low Noise Amplifier (LNA) with a very good noise figure and a switch.
The die is manufactured using OMMIC’s high-performance 100 nm gate length GaN on Si HEMT power technology (D01GH). This technology is being evaluated for space applications. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.