The CGY2160UH/C1 is a distributed wide band amplifier designed to operate from 1.5 GHz to 47 GHz and includes on chip biasing networks. This device offers a very wideband performance, low noise performance (2.5 dB noise figure at mid-band) while maintaining a good P1dB compression point (17 dBm at 10 GHz). The on chip bias network includes a current control function which maintains the device operating close to the nominal biasing point over temperature and component dispersion.
The die is manufactured using D01PH OMMIC’s 135 nm gate length pHEMT GaAs technology. The process is one of the European Space Agency (ESA) european preferred part list (EPPL) technologies.