CGY2870AUH/C1

80 – 110 GHz ZERO BIAS TUNEL DIODE (RITD)

The CGY2870AUH/C1 is a high performance GaAs 50 Ohms Matched zero bias detector diode operating as high as W-band. The zero bias diode is not temperature dependant. As a detector diode, the device has a sensitivity of 9 mV/uW at 94 GHz. The die have been carefully designed to support a connection by bondings.

The die is manufactured using the OMMIC’s RITD (Resonnant Interband Tunnel Diode) technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. This part is the member of a chipset dedicated to radiometer type of application for passive imaging at very high frequency.

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PRODUCT DSDatasheet / S2PS2P Files / QTGet a quote FREQ. MIN (GHz) FREQ. MAX (GHz) SENSITIVITY (mV/uW) IRL (dB) BREAKDOWN VOLTAGE (V) PACKAGE BOARD STATUS PROCESS
CGY2870AUH/C1
80 110 5 -15 >2 Die - Production RITDM

FEATURES

  • NEP : 1.1pW/√Hz
  • Input power : < 0 dBm
  • Reverse Breakdown Voltage : 0.5V Max
  • Tested, Inspected Known Good Die (KGD)
Product size: 0.9 x 0.7 mm²

APPLICATIONS

  • Passive Imaging application
  • Radar
  • Instrumentation

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DIODES

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